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参数资料
| 型号： | MMSS8550-H-TP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LAED FREE, PLASTIC PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 154K |
| 代理商： | MMSS8550-H-TP |
MMSS8550-L
Features
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
40
---
Vdc
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=0.1mAdc, IB=0)
25
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
6.0
---
Vdc
ICBO
Collector Cutoff Current
(VCB=40Vdc, IE=0)
---
0.1
uAdc
ICEO
Collector Cutoff Current
(VCE=20Vdc, IB=0)
---
0.1
uAdc
IEBO
Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
---
0.1
uAdc
ON CHARACTERISTICS
hFE(1)
DC Current Gain
(IC=100mAdc, VCE=1.0Vdc)
120
350
---
hFE(2)
DC Current Gain
(IC=800mAdc, VCE=1.0Vdc)
40
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=800mAdc, IB=80mAdc)
---
0.5
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=800mAdc, IB=80mAdc)
---
1.2
Vdc
VEB
Base- Emitter Voltage
(IE=1.5Adc)
---
1.6
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Transistor Frequency
(IC=50mAdc, VCE=10Vdc, f=30MHz)
100
---
MHz
CLASSIFICATION OF HFE (1)
Rank
L
H
Range
120-200
200-350
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
A
B
C
D
E
F
G
H
J
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
PNP Silicon
Plastic-Encapsulate
Transistor
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
Revision: A
2011/01/01
TM
Micro Commercial Components
E
B
C
Marking:Y2
Capable of 0.625Watts(Tamb=25
OC) of Power Dissipation.
Collector-current 1.5A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55
OC to +150OC
www.mccsemi.com
1 of 2
K
Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
MMSS8550-H
相关PDF资料 |
PDF描述 |
|---|---|
| MMSS8550-TP | 1500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMSS8550H-TP | 1500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMSS8550L-TP | 1500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMSS8550H | 1500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMSS8550L | 1500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMSS8550H-TP | 制造商:Micro Commercial Components (MCC) 功能描述:PNP Silicon Plastic Encpsulate Transistor |
| MMSS8550-L | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:PNP Silicon Plastic-Encapsulate Transistor |
| MMSS8550-L_13 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:PNP Silicon Plastic-Encapsulate Transistor |
| MMSS8550-L-TP | 功能描述:两极晶体管 - BJT 625mW, 25V, 1500mA RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMSST-02-20-F-04.00-D-K-LUS | 制造商:Samtec Inc 功能描述:.100 SOCKET DISCREET CABLE ASSEMBLY - Bulk |
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