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参数资料
| 型号： | MMST2907AP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 0K |
| 代理商： | MMST2907AP |
MMST2907A
PNP Small Signal
Transistors
Features
Power dissipation: 200mW (Tamb=25
℃)
Collector current: -0.6A
Marking Code: K3F
Operating and Storage junction temperature range
-55
℃ to + 150℃
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS (2)
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=-10mAdc, IB=0)
-60
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-10uAdc, IE=0)
-60
---
Vdc
V(BR)EBO
Collector-Emitter Breakdown Voltage
(IE=-10uAdc, IC=0)
-5.0
---
Vdc
ICBO
Collector Cutoff Current
(VCB=-50Vdc, IE=0Vdc)
---
-0.01
Adc
ICEO
Collector Cutoff Current
(VCE=-35Vdc, IB=0Vdc)
---
-0.05
Adc
IEBO
Emitter Cutoff Current
(VEB=-3Vdc, IC=0Vdc)
---
-0.01
Adc
hFE
DC Current Gain
(IC=-150mAdc, VCE=-10Vdc)
(IC=-1mAdc, VCE=-10Vdc)
100
300
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-500mAdc, IB=-50mAdc)
---
-0.6
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=-500mAdc, IB=-50mAdc)
---
-1.2
Vdc
fT
Current Gain-Bandwidth Product
(VCE=-20Vdc, IC=-50mAdc, f=100MHz)
200
---
MHz
Cob
Output Capacitance
(VCB=-10Vdc, f=1.0MHz, IE=0)
---
8
pF
td
Delay Time
tr
Rise Time
VCC=-30V,IC=-150mA,
VBE(off)=-0.5V,IB1=-15mA
---
10
25
ns
ts
Storage Time
tf
Fall Time
VCC=-30V, IC=-150mA,
IB1=IB2=-15mA
---
80
30
ns
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: 2
2006/05/13
SOT-323
Suggested Solder
Pad Layout
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.071
.087
1.80
2.20
B
.045
.053
1.15
1.35
C
.079
.087
2.00
2.20
D
.026 Nominal
0.65Nominal
E
.047
.055
1.20
1.40
F
.012
.016
.30
.40
G
.000
.004
.000
.100
H
.035
.039
.90
1.00
J
.004
.010
.100
.250
K
.012
.016
.30
.40
A
C
B
D
E
F
G
H
J
1.90
0.70
0.90
0.65
DIMENSIONS
K
TM
Micro Commercial Components
E
B
C
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
www.mccsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMST2907A-T | 功能描述:两极晶体管 - BJT -600mA -60V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMST2907AT146 | 功能描述:两极晶体管 - BJT PNP 60V 0.6A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMST2907A-TP | 功能描述:两极晶体管 - BJT -600mA -60V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMST2907A-TP-TR | 制造商:Micro Commercial Components (MCC) 功能描述:Trans GP BJT PNP 60V 0.6A 3-Pin SOT-323 T/R |
| MMST3904 | 制造商:ROHM 功能描述:3904 ROHM SMT T/R LOC:S2C7A 制造商:Diodes Incorporated 功能描述: 制造商:ROHM Semiconductor 功能描述: 制造商:ROHM Semiconductor 功能描述:Bipolar Junction Transistor, NPN Type, SOT-323 |
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