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参数资料
| 型号： | MMST2907AT146 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-59, SMT3, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 111K |
| 代理商： | MMST2907AT146 |
UMT2907A / SST2907A / MMST2907A
Transistors
Rev.B
1/4
PNP Medium Power Transistor
(Switching)
UMT2907A / SST2907A / MMST2907A
Features
1) BVCEO< -60V (IC=-10mA)
2) Complements the UMT2222A / SST2222A /
MMST2222A.
Package, marking and packaging specifications
Part No.
UMT2907A
UMT3
R2F
T106
3000
SST2907A
SST3
R2F
T116
3000
MMST2907A
SMT3
R2F
T146
3000
Packaging type
Marking
Code
Basic ordering unit
(pieces)
Absolute maximum ratings (Ta=25
°C)
UMT2907A,
SST2907A,
MMST2907A
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Tj
Tstg
Limits
60
5
0.6
150
55 to +150
Unit
V
A
PC
0.2
W
Mounted on a 7x5x0.6mm ceramic substrate.
SST2907A
0.35
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Dimensions (Unit : mm)
UMT2907A
SST2907A
MMST2907A
ROHM : UMT3
EIAJ : SC-70
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
100
V
nA
IC=
10A
IC=
10mA
IE=
10A
VCB=
50V
ICES
100
VCB=
30V
VEB=
3V
2.6
VBE(sat)
1.3
V
1.6
IC/IB=
500mA/ 50mA
VCE(sat)
0.4
V
IC/IB=
150mA/ 15mA
IC/IB=
500mA/ 50mA
IC/IB=
150mA/ 15mA
300
hFE
VCE=
10V, IC= 0.1mA
VCE=
10V, IC= 1mA
VCE=
10V, IC= 10mA
VCE=
10V, IC= 150mA
VCE=
10V, IC= 500mA
fT
Cob
8
MHz
pF
VCE=
20V, IE=50mA, f=100MHz
VCB=
10V, f=100kHz
Cib
30
pF
VEB=
2V, f=100kHz
ton
50
ns
VCC=
30V, VBE(OFF)= 1.5V, IC= 150mA, IB1= 15mA
td
10
ns
VCC=
30V, VBE(OFF)= 1.5V, IC= 150mA, IB1= 15mA
VCC=
30V, VBE(OFF)= 1.5V, IC= 150mA, IB1= 15mA
tr
40
ns
VCC=
30V, IC= 150mA, IB1=IB2= 15mA
toff
100
ns
tstg
80
ns
VCC=
30V , IC= 150mA, IB1=IB2= 15mA
VCC=
30V, IC= 150mA, IB1=IB2= 15mA
tf
60
5
100
75
50
200
30
ns
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Base-emitter saturation voltage
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Collector output capacitance
Emitter input capacitance
Turn-on time
Delay time
Rise time
Turn-off time
Storage time
Fall time
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMST2907A-TP | 功能描述:两极晶体管 - BJT -600mA -60V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMST2907A-TP-TR | 制造商:Micro Commercial Components (MCC) 功能描述:Trans GP BJT PNP 60V 0.6A 3-Pin SOT-323 T/R |
| MMST3904 | 制造商:ROHM 功能描述:3904 ROHM SMT T/R LOC:S2C7A 制造商:Diodes Incorporated 功能描述: 制造商:ROHM Semiconductor 功能描述: 制造商:ROHM Semiconductor 功能描述:Bipolar Junction Transistor, NPN Type, SOT-323 |
| MMST3904_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMST3904_11 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:NPN Small Signal Transistors |
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