参数资料
型号: MMST3904
厂商: LITE-ON SEMICONDUCTOR CORP
元件分类: 小信号晶体管
英文描述: 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: PLASTIC, SOT-323, 3 PIN
文件页数: 2/2页
文件大小: 0K
代理商: MMST3904
DS30082 Rev. 2P-1
2 of 2
MMST3904
NEW
PRODUCT
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V(BR)CBO
60
V
IC = 10
A, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
5.0
6.0
V
IE = 10
A, IC = 0
Collector Cutoff Current
ICEX
50
nA
VCE = 30V, VEB(OFF) = 3.0V
Base Cutoff Current
IBL
50
nA
VCE = 30V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 2)
DC Current Gain
hFE
40
70
100
60
30
300
IC = 100A, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.25
0.30
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base- Emitter Saturation Voltage
VBE(SAT)
0.65
0.85
0.95
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
4.0
pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
8.0
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.0
10
k
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
hre
0.5
8.0
x 10-4
Small Signal Current Gain
hfe
100
400
Output Admittance
hoe
1.0
40
S
Current Gain-Bandwidth Product
fT
300
MHz
VCE = 20V, IC = 10mA,
f = 100MHz
Noise Figure
NF
5.0
dB
VCE = 5.0V, IC = 100
A,
RS = 1.0k
, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
td
35
ns
VCC = 3.0V, IC = 10mA,
VBE(off) = - 0.5V, IB1 = 1.0mA
Rise Time
tr
35
ns
Notes:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width
≤ 300s, duty cycle ≤ 2%.
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