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参数资料
| 型号： | MMST4124-13 |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ULTRA SMALL, PLASTIC PACKAGE-3 |
| 文件页数： | 2/3页 |
| 文件大小： | 65K |
| 代理商： | MMST4124-13 |
DS30163 Rev. 5 - 2
2 of 3
MMST4124
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V(BR)CBO
30
V
IC = 10
A, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
25
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
5.0
6.0
V
IE = 10
A, IC = 0
Collector Cutoff Current
ICBO
50
nA
VCB = 20V, IE = 0V
Emitter Cutoff Current
IEBO
50
nA
VEB = 3.0V, IC = 0V
ON CHARACTERISTICS (Note 3)
DC Current Gain
hFE
120
60
360
IC = 2.0mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.30
V
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.95
V
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
4.0
pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
8.0
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Small Signal Current Gain
hfe
120
480
VCE = 1.0V, IC = 2.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
fT
300
MHz
VCE = 20V, IC = 10mA,
f = 100MHz
Ordering Information (Note 4)
Device
Packaging
Shipping
MMST4124-7
SOT-323
3000/Tape & Reel
Notes:
3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMST4124-7-F
.
Marking Information
K1B
YM
K1B = Product Type Marking Code, ex: K1H = MMSTA05
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
JK
L
M
N
P
R
ST
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
12
3
4
5
6
7
89
O
N
D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMST4124-7 | 功能描述:两极晶体管 - BJT 25V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMST4124-7-F | 功能描述:两极晶体管 - BJT 25V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMST4124T146 | 功能描述:两极晶体管 - BJT SMT NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMST4126 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMST4126 BULK | 制造商:ROHM 功能描述:SWITCHING PNP SMD (Surface Mount) Transistor SOT-23 制造商:ROHM 功能描述:SWITCHING PNP SMD (Surface Mount) Transistor SOT-23 - free partial T/R at 500. |
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