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参数资料
| 型号： | MMST4401P |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 2/2页 |
| 文件大小： | 0K |
| 代理商： | MMST4401P |
MCC
Revision: 2
2006/05/13
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Micro Commercial Components
www.mccsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMST4401-T | 功能描述:两极晶体管 - BJT 600mA 40 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMST4401T116 | 制造商:ROHM 制造商全称:Rohm 功能描述:NPN Medium Power Transistor |
| MMST4401T146 | 功能描述:两极晶体管 - BJT NPN 40V 0.6A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMST4401T246 | 制造商:ROHM SEMICONDUCTOR 功能描述:TRANS GP BJT NPN 40V 0.6A 3P TR |
| MMST4401-TP | 功能描述:两极晶体管 - BJT 600mA 40 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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