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参数资料
| 型号： | MMSZ4712-V-GS18 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 28 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 3/6页 |
| 文件大小： | 65K |
| 代理商： | MMSZ4712-V-GS18 |
MMSZ4681-V to MMSZ4717-V
Document Number 85773
Rev. 1.7, 17-Jul-08
Vishay Semiconductors
www.vishay.com
3
For technical support, please contact: DiodesSSP@vishay.com
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 2. Typical Change of Working Voltage under Operating
Conditions at Tamb=25°C
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
0
100
200
300
400
500
600
020
40
60
80
100 120 140 160
Tamb - Ambient Temperature (°C)
P
tot
-
Total
Po
w
er
Dissipation
(m
W
)
20850
10
15
20
1
10
100
1000
V
Z
-
V
oltage
Change
(m
V
)
VZ - Z-Voltage (V)
25
95 9598
T
j = 25 °C
I
Z = 5 mA
0
5
- 60
60
120
180
0.8
0.9
1.0
1.1
1.2
1.3
V
Ztn
-
Relative
Voltage
Change
Tj - Junction Temperature (°C)
240
95 9599
0
VZtn = VZt/VZ (25 °C)
0
TKVZ = 10 x 10-4/K
8 x 10-4/K
2 x 10-4/K
6 x 10-4/K
4 x 10-4/K
- 4 x 10-4/K
- 2 x 10-4/K
Figure 4. Temperature Coefficient of Vz vs. Z-Voltage
Figure 5. Diode Capacitance vs. Z-Voltage
Figure 6. Forward Current vs. Forward Voltage
- 5
0
5
10
15
VZ - Z-Voltage (V)
95 9600
I
Z = 5 mA
0
10
203040
50
TK
V
Z
-
Temperat
u
re
Coefficient
of
V
Z
(10
-4
/K)
10
15
0
50
100
150
200
C
D
-
Diode
Capacitance
(pF)
VZ - Z-Voltage (V)
25
95 9601
20
T
j = 25 °C
V
R = 2 V
0
5
0
0.2
0.4
0.6
0.8
0.001
0.01
0.1
1
10
100
1.0
95 9605
I F
-
For
w
ard
C
u
rrent
(mA)
VF - Forward Voltage (V)
T
j = 25 °C
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