参数资料
型号: MMSZ5262ET3
厂商: ON SEMICONDUCTOR
元件分类: 齐纳二极管
英文描述: 51 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
封装: PLASTIC, CASE 425-04, 2 PIN
文件页数: 5/6页
文件大小: 79K
代理商: MMSZ5262ET3
MMSZ5221ET1 Series
http://onsemi.com
5
TYPICAL CHARACTERISTICS
C,
CAP
ACIT
ANCE
(pF)
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 7. Typical Capacitance
1000
100
10
1
10
1
BIAS AT
50% OF VZ NOM
TA = 25°C
0 V BIAS
1 V BIAS
12
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.01
10
8
6
4
2
0
TA = 25°C
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.01
10
30
50
70
90
TA = 25°C
90
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 8. Typical Leakage Current
1000
100
10
1
0.1
0.01
0.001
0.0001
0.00001
80
70
60
50
40
30
20
10
0
+150
°C
+25
°C
55
°C
Figure 9. Zener Voltage versus Zener Current
(VZ Up to 12 V)
Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
I R
,LEAKAGE
CURRENT
(
m
A
)
I Z
,ZENER
CURRENT
(mA)
I Z
,ZENER
CURRENT
(mA)
100
Figure 11. 8
× 20 ms Pulse Waveform
90
80
70
60
50
40
30
20
10
0
020
4060
80
t, TIME (
ms)
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8
ms
HALF VALUE IRSM/2 @ 20 ms
%
OF
PEAK
PULSE
CURRENT
PEAK VALUE IRSM @ 8 ms
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