参数资料
| 型号： | MMT10B260T3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | THYRIST TSPD BIDIR 100A 200V SMB |
| 产品变化通告： | TSPD Discontinuation 30/May/2012 |
| 标准包装： | 1 |
| 电压 - 击穿： | 320V |
| 电压 - 断路： | 200V |
| 电压 - 导通状态： | 5V |
| 电流 - 峰值脉冲(10 x 1000µs)： | 100A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 1 |
| 电容： | 200pF |
| 封装/外壳： | DO-214AA，SMB |
| 包装： | 剪切带 (CT) |
| 其它名称： | MMT10B260T3GOSCT |
MMT10B230T3,
MMT10B260T3,
MMT10B310T3
Preferred Device
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
http://onsemi.com
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover?triggered crowbar
protectors. Turn?off occurs when the surge current falls below the
holding current value.
Secondary protection applications for electronic telecom equipment
at customer premises.
Features
? Outstanding High Surge Current Capability: 100 A 10x1000 m sec
Guaranteed at the extended temp range of ?20 ° C to 65 ° C
? The MMT10B230T3 Series is used to help equipment meet various
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,
BIDIRECTIONAL TSPD (
100 AMP SURGE
265 thru 365 VOLTS
MT1
MT2
)
?
?
?
?
?
?
?
?
IEC 950, UL 1459 & 1950 and FCC Part 68.
Bidirectional Protection in a Single Device
Little Change of Voltage Limit with Transient Amplitude or Rate
Freedom from Wearout Mechanisms Present in Non?Semiconductor
Devices
Fail?Safe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
Surface Mount Technology (SMT)
Complies with GR1089 Second Level Surge Spec at 500 A
2x10 m sec Waveforms
Indicates UL Registered ? File #E210057
Pb?Free Packages are Available
SMB
(No Polarity)
(Essentially JEDEC DO?214AA)
CASE 403C
MARKING DIAGRAMS
AYWW
RPDx G
G
A = Assembly Location
Y = Year
WW = Work Week
RPDx = Device Code
x = F, G, or J
G
= Pb?Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
Preferred devices are recommended choices for future use
and best overall value.
? Semiconductor Components Industries, LLC, 2005
August, 2005 ? Rev. 8
1
Publication Order Number:
MMT10B230T3/D
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| MMT10B230T3G | THYRIST TSPD BIDIR 100A 170V SMB |
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| SQT-116-01-L-D | CONN RCPT 2MM 32POS DL VERT PCB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMT10B310T3 | 功能描述:硅对称二端开关元件 100A Surge 365V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| MMT10B310T3G | 功能描述:硅对称二端开关元件 100A Surge 365V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| MMT10B350T3 | 功能描述:硅对称二端开关元件 100A Surge 400V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| MMT10B350T3G | 功能描述:硅对称二端开关元件 100A Surge 400V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| MMT10-M | 制造商:Tamura Corporation of America 功能描述: |
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