参数资料
型号: MMT10B350T3G
厂商: ON Semiconductor
文件页数: 1/5页
文件大小: 0K
描述: THYRIST TSPD BIDIR 100A 350V SMB
产品变化通告: TSPD Discontinuation 10/Jul/2012
标准包装: 1
电压 - 击穿: 400V
电压 - 断路: 300V
电压 - 导通状态: 5V
电流 - 峰值脉冲(10 x 1000µs): 100A
电流 - 保持 (Ih): 150mA
元件数: 1
电容: 85pF
封装/外壳: DO-214AA,SMB
包装: 剪切带 (CT)
其它名称: MMT10B350T3GOSCT
MMT10B350T3
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover?triggered crowbar
protectors. Turn?off occurs when the surge current falls below the
http://onsemi.com
holding current value.
Secondary protection applications for electronic telecom equipment
at customer premises.
Features
BIDIRECTIONAL TSPD (
100 AMP SURGE, 350 VOLTS
)
? High Surge Current Capability: 100 Amps 10 x 1000 m sec, for
Controlled Temperature Environments
? The MMT10B350T3 Series is used to help equipment meet various
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,
MT1
MT2
?
?
?
?
?
?
?
IEC 950, UL 1459 & 1950 and FCC Part 68.
Bidirectional Protection in a Single Device
Little Change of Voltage Limit with Transient Amplitude or Rate
Freedom from Wearout Mechanisms Present in Non?Semiconductor
Devices
Fail?Safe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
Surface Mount Technology (SMT)
Indicates UL Recognized ? File #E210057
Pb?Free Package is Available
SMB
(No Polarity)
(Essentially JEDEC DO?214AA)
CASE 403C
MARKING DIAGRAM
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol
Off?State Voltage ? Maximum V DM
Maximum Pulse Surge Short Circuit Current
Value
300
Unit
V
A(pk)
AYWW
RPDM G
G
Non?Repetitive
Double Exponential Decay Waveform
A = Assembly Location
(Notes 1 and 2)
10 x 1000 m sec
?25 ° C Initial Temperature
2 x 10 m sec
10 x 160 m sec
10 x 700 m sec
I PPS1
I PPS2
I PPS3
I PPS4
" 100
" 500
" 200
" 180
Y = Year
WW = Work Week
RPDM = Device Code
G = Pb?Free Package
(Note: Microdot may be in either location)
Maximum Non?Repetitive Rate of Change of
On?State Current Double Exponential Waveform,
R = 2.4 W , L = 2.0 m H, C = 2.0 m F, I pk = 110 A
di/dt
" 100
A/ m s
ORDERING INFORMATION
Device Package Shipping ?
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
MMT10B350T3
SMB
2500/Tape & Reel
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MMT10B350T3G
SMB
(Pb?Free)
2500/Tape & Reel
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
? Semiconductor Components Industries, LLC, 2006
January, 2006 ? Rev. 2
1
Publication Order Number:
MMT10B350T3/D
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