参数资料
型号: MMUN2114LT3
厂商: MOTOROLA INC
元件分类: 小信号晶体管
英文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
文件页数: 4/10页
文件大小: 188K
代理商: MMUN2114LT3
MMUN2111LT1 SERIES
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k)
MMUN2115LT1
MMUN2116LT1
MMUN2131LT1
MMUN2132LT1
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MMUN2130LT1
VOH
4.9
Vdc
Input Resistor
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
R1
7.0
15.4
32.9
7.0
3.3
0.7
1.5
3.3
15.4
10
22
47
10
4.7
1.0
2.2
4.7
22
13
28.6
61.1
13
6.1
1.3
2.9
6.1
28.6
k
Resistor Ratio MMUN2111LT1/MMUN2112LT1/MMUN2113LT1
MMUN2114LT1
MMUN2115LT1/MMUN2116LT1
MMUN2130LT1/MMUN2131LT1/MMUN2132LT1
MMUN2133LT1
R1/R2
0.8
0.17
0.8
0.055
1.0
0.21
1.0
0.1
1.2
0.25
1.2
0.185
相关PDF资料
PDF描述
MMUN2112LT3 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMUN2131LT3 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMUN2132LT3 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMUN2114T1 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMUN2112T3 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
相关代理商/技术参数
参数描述
MMUN2114LT3G 功能描述:肖特基二极管与整流器 SS BR XSTR PNP 50V SOT23 RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MMUN2114RLT1 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:Bias Resistor Transistor
MMUN2115 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:Bias Resistor Transistor
MMUN2115L 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Digital Transistors (BRT) R1 = 10 k, R2 =  k
MMUN2115LT1 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel