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参数资料
| 型号： | MMUN2114LT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | CASE 318-08, 3 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 186K |
| 代理商： | MMUN2114LT3 |
Semiconductor Components Industries, LLC, 2001
January, 2001 – Rev. 1
734
Publication Order Number:
MMUN2111LT1/D
MMUN2111LT1 Series
Preferred Devices
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT-23 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel. Use the Device Number
to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the
Device Number to order the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25
°C
PD
246 (Note 1.)
400 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
mW
°C/W
Thermal Resistance –
Junction-to-Ambient
RθJA
508 (Note 1.)
311 (Note 2.)
°C/W
Thermal Resistance –
Junction-to-Lead
RθJL
174 (Note 1.)
208 (Note 2.)
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
–55 to +150
°C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
SOT–23
CASE 318
STYLE 6
http://onsemi.com
A6x
= Device Marking
x
= A – L (See
Page 735)
M
= Date Code
A6x M
MARKING DIAGRAM
1
3
2
Preferred devices are recommended choices for future use
and best overall value.
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 735 of this data sheet.
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PDF描述 |
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| MMUN2133LT3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMUN2114LT3G | 功能描述:肖特基二极管与整流器 SS BR XSTR PNP 50V SOT23 RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MMUN2114RLT1 | 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:Bias Resistor Transistor |
| MMUN2115 | 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:Bias Resistor Transistor |
| MMUN2115L | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Digital Transistors (BRT) R1 = 10 k, R2 = k |
| MMUN2115LT1 | 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
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