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参数资料
| 型号： | MMUN2115LT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | CASE 318-08, 3 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 186K |
| 代理商： | MMUN2115LT3 |
MMUN2111LT1 Series
http://onsemi.com
735
DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
R1 (K)
R2 (K)
Shipping
MMUN2111LT1
MMUN2111LT3
SOT–23
A6A
10
3000/Tape & Reel
10,000/Tape & Reel
MMUN2112LT1
MMUN2112LT3
SOT–23
A6B
22
3000/Tape & Reel
10,000/Tape & Reel
MMUN2113LT1
MMUN2113LT3
SOT–23
A6C
47
3000/Tape & Reel
10,000/Tape & Reel
MMUN2114LT1
MMUN2114LT3
SOT–23
A6D
10
47
3000/Tape & Reel
10,000/Tape & Reel
MMUN2115LT1 (Note 3.)
MMUN2115LT3
SOT–23
A6E
10
∞
3000/Tape & Reel
10,000/Tape & Reel
MMUN2116LT1 (Note 3.)
MMUN2116LT3
SOT–23
A6F
4.7
∞
3000/Tape & Reel
10,000/Tape & Reel
MMUN2130LT1 (Note 3.)
MMUN2130LT3
SOT–23
A6G
1.0
3000/Tape & Reel
10,000/Tape & Reel
MMUN2131LT1 (Note 3.)
MMUN2131LT3
SOT–23
A6H
2.2
3000/Tape & Reel
10,000/Tape & Reel
MMUN2132LT1 (Note 3.)
MMUN2132LT3
SOT–23
A6J
4.7
3000/Tape & Reel
10,000/Tape & Reel
MMUN2133LT1 (Note 3.)
MMUN2133LT3
SOT–23
A6K
4.7
47
3000/Tape & Reel
10,000/Tape & Reel
MMUN2134LT1 (Note 3.)
MMUN2134LT3
SOT–23
A6L
22
47
3000/Tape & Reel
10,000/Tape & Reel
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
–
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
–
500
nAdc
Emitter-Base Cutoff Current
MMUN2111LT1
(VEB = 6.0 V, IC = 0)
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
IEBO
–
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
mAdc
Collector-Base Breakdown Voltage (IC = 10 A, IE = 0)
V(BR)CBO
50
–
Vdc
Collector-Emitter Breakdown Voltage (Note 4.)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
–
Vdc
3. New devices. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
相关PDF资料 |
PDF描述 |
|---|---|
| MMUN2112LT3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2133LT3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2130LT3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2134LT3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2211L | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMUN2116 | 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:Bias Resistor Transistor |
| MMUN2116L | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Digital Transistors (BRT) R1 = 4.7 k, R2 = k |
| MMUN2116LT1 | 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| MMUN2116LT1G | 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| MMUN2116LT3 | 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:Bias Resistor Transistors |
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