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| 型号： | MMUN2131LT1G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, TO-236, 3 PIN |
| 文件页数： | 1/13页 |
| 文件大小： | 190K |
| 代理商： | MMUN2131LT1G |
Semiconductor Components Industries, LLC, 2009
August, 2009 Rev. 10
1
Publication Order Number:
MMUN2111LT1/D
MMUN2111LT1G Series
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT-23 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel.
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
246 (Note 1)
400 (Note 2)
2.0 (Note 1)
3.2 (Note 2)
mW
mW/°C
Thermal Resistance,
Junction-to-Ambient
RqJA
508 (Note 1)
311 (Note 2)
°C/W
Thermal Resistance,
Junction-to-Lead
RqJL
174 (Note 1)
208 (Note 2)
°C/W
Junction and Storage,
Temperature Range
TJ, Tstg
55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR4 @ Minimum Pad
2. FR4 @ 1.0 x 1.0 inch Pad
SOT23
CASE 318
STYLE 6
MARKING
DIAGRAM
1
3
2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
http://onsemi.com
1
A6x M G
G
A6x
= Device Code
x
= A L (Refer to page 2)
M
= Date Code*
G
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Device
Package
Shipping
ORDERING INFORMATION
MMUN21xxLT3G
SOT23
(PbFree)
10000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMUN21xxLT1G
SOT23
(PbFree)
3000/Tape & Reel
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMUN2131LT3 | 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:Bias Resistor Transistors |
| MMUN2131RLT1 | 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:Bias Resistor Transistor |
| MMUN2132 | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Bias Resistor Transistor PNP Silicon |
| MMUN2132L | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k |
| MMUN2132LT1 | 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
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