参数资料
型号: MMUN2235LT1
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封装: CASE 318-08, 3 PIN
文件页数: 7/10页
文件大小: 186K
代理商: MMUN2235LT1
MMUN2211LT1 Series
http://onsemi.com
746
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2213LT1
V
CE(sat),
MAXIMUM
COLLECT
OR
VOL
T
AGE
(VOL
TS)
Figure 12. VCE(sat) vs. IC
0
204060
80
10
1
0.1
0.01
IC, COLLECTOR CURRENT (mA)
IC/IB = 10
TA = –25°C
75
°C
25
°C
Figure 13. DC Current Gain
1000
10
IC, COLLECTOR CURRENT (mA)
100
10
1
100
VCE = 10 V
h
FE,
DC
CURRENT
GAIN
(NORMALIZED)
TA = 75°C
–25
°C
25
°C
Figure 14. Output Capacitance
50
010
20
30
40
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
f = 1 MHz
lE = 0 A
TA = 25°C
C
ob,
CAP
ACIT
ANCE
(pF)
02
4
6
8
10
100
10
1
0.1
0.01
0.001
Vin, INPUT VOLTAGE (VOLTS)
Figure 15. Output Current vs. Input Voltage
VO = 5 V
I C,
COLLECT
OR
CURRENT
(mA)
TA = –25°C
75
°C
25
°C
TA = –25°C
75
°C
25
°C
100
10
1
0.1
010
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage vs. Output Current
VO = 0.2 V
V
in,
INPUT
VOL
T
AGE
(VOL
TS)
75°C
TA = –25°C
25
°C
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