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参数资料
| 型号： | MOC212VM |
| 厂商： | Fairchild Optoelectronics Group |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | OPTOCOUPLER TRANS-OUT 8-SOIC |
| 标准包装： | 3,000 |
| 通道数： | 1 |
| 输入类型： | DC |
| 电压 - 隔离： | 2500Vrms |
| 电流传输比（最小值）： | 50% @ 10mA |
| 输出电压： | 30V |
| 电流 - 输出 / 通道： | 150mA |
| 电流 - DC 正向(If)： | 60mA |
| Vce饱和（最大）： | 400mV |
| 输出类型： | 有基极的晶体管 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 管件 |
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. T A = 25°C unless otherwise speci?ed.
Symbol
Rating
Value
Unit
Emitter
I F
I F (pk)
V R
P D
Forward Current – Continuous
Forward Current – Peak (PW = 100 μs, 120 pps)
Reverse Voltage
LED Power Dissipation @ T A = 25°C
Derate above 25°C
60
1.0
6.0
90
0.8
mA
A
V
mW
mW/°C
Detector
V CEO
V ECO
V CBO
I C
P D
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector-Base Voltage
Collector Current-Continuous
Detector Power Dissipation @ T A = 25°C
Derate above 25°C
30
7.0
70
150
150
1.76
V
V
V
mA
mW
mW/°C
Total Device
V ISO
P D
T A
T stg
T L
Input-Output Isolation Voltage
(f = 60 Hz, t = 1 minute) (1)(2)(3)
Total Device Power Dissipation @ T A = 25°C
Derate above 25°C
Ambient Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
2500
250
2.94
-40 to +100
-40 to +150
260
Vac(rms)
mW
mW/°C
°C
°C
°C
(1/16 " from case, 10 second duration)
Notes:
1. Isolation Surge Voltage, V ISO , is an internal device dielectric breakdown rating.
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3. V ISO rating of 2500 V AC(rms) for t = 1 minute is equivalent to a rating of 3,000 V AC(rms) for t = 1 second.
?2005 Fairchild Semiconductor Corporation
MOC211M, MOC212M, MOC213M Rev. 1.0.2
2
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MOC213 | 制造商:Freescale Semiconductor 功能描述: |
| MOC213M | 功能描述:晶体管输出光电耦合器 SO-8 PHOTO TRANS RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| MOC213-M | 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER TRANSISTOR O/P SOIC-W 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER, TRANSISTOR O/P, SOIC-W 制造商:Fairchild Semiconductor Corporation 功能描述:NPN OPTOCOUPLER, 2.5KV; No. of Channels:1; Isolation Voltage:2.5kV; Optocoupler Output Type:Transistor; Input Current:10mA; Output Voltage:30V; Opto Case Style:SOIC; No. of Pins:8; Leaded Process Compatible:Yes ;RoHS Compliant: Yes |
| MOC213-M | 制造商:Fairchild Semiconductor Corporation 功能描述:NPN-Output dc-Input Optocoupler1-CHANNE |
| MOC213M_Q | 功能描述:晶体管输出光电耦合器 SO-8 PHOTO TRANS RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
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