参数资料
型号: MOC213VM
厂商: Fairchild Optoelectronics Group
文件页数: 3/10页
文件大小: 0K
描述: OPTOCOUPLER TRANS-OUT 8-SOIC
标准包装: 3,000
通道数: 1
输入类型: DC
电压 - 隔离: 2500Vrms
电流传输比(最小值): 100% @ 10mA
输出电压: 30V
电流 - 输出 / 通道: 150mA
电流 - DC 正向(If): 60mA
Vce饱和(最大): 400mV
输出类型: 有基极的晶体管
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
包装: 管件
Electrical Characteristics
T A = 25°C unless otherwise speci?ed.
Symbol
Parameter
Test Conditions
Min.
Typ.*
Max.
Unit
Emitter
V F
I R
C IN
Input Forward Voltage
Reverse Leakage Current
Input Capacitance
I F = 10 mA
V R = 6.0 V
1.15
0.001
18
1.5
100
V
μA
pF
Detector
I CEO1
I CEO2
Collector-Emitter Dark Current
V CE = 10 V, T A = 25°C
V CE = 10 V, T A = 100°C
1.0
1.0
50
nA
μA
BV CEO
Collector-Emitter Breakdown
I C = 100 μA
30
100
V
Voltage
BV ECO
Emitter-Collector Breakdown
I E = 100 μA
7.0
10
V
Voltage
C CE
Collector-Emitter Capacitance
f = 1.0 MHz, V CE = 0
7.0
pF
Coupled
CTR
Collector-Output Current (4)
I F = 10 mA, V CE = 10 V
MOC211M
MOC212M
MOC213M
20
50
100
%
V ISO
Isolation Surge Voltage (1)(2)(3)
f = 60 Hz AC Peak, t = 1 minute
2500
Vac(rms)
R ISO
Isolation Resistance
(2)
V = 500 V
10
11
Ω
V CE (sat) Collector-Emitter Saturation Voltage I C = 2.0 mA, I F = 10 mA
0.4
V
C ISO
t on
Isolation Capacitance (2)
Turn-On Time
V = 0 V, f = 1 MHz
I C = 2.0 mA, V CC = 10 V, R L = 100 Ω
0.2
7.5
pF
μs
(Fig. 12)
t off
Turn-Off Time
I C = 2.0 mA, V CC = 10 V, R L = 100 Ω
5.7
μs
(Fig. 12)
t r
Rise Time
I C = 2.0 mA, V CC = 10 V, R L = 100 Ω
3.2
μs
(Fig. 12)
t f
Fall Time
I C = 2.0 mA, V CC = 10 V, R L = 100 Ω
4.7
μs
(Fig. 12)
*Typical values at T A = 25°C
Notes:
1. Isolation Surge Voltage, V ISO , is an internal device dielectric breakdown rating.
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3. V ISO rating of 2500 V AC(rms) for t = 1 minute is equivalent to a rating of 3,000 V AC(rms) for t = 1 second.
4. Current Transfer Ratio (CTR) = I C / I F x 100 %.
?2005 Fairchild Semiconductor Corporation
MOC211M, MOC212M, MOC213M Rev. 1.0.2
3
www.fairchildsemi.com
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