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参数资料
| 型号： | MOC3062VM |
| 厂商： | Fairchild Optoelectronics Group |
| 文件页数： | 3/11页 |
| 文件大小： | 0K |
| 描述： | OPTOCOUPLER TRIAC ZC VDE 6-DIP |
| 标准包装： | 1,000 |
| 电压 - 隔离： | 7500Vpk |
| 通道数： | 1 |
| 电压 - 断路： | 600V |
| 输出类型： | 交流过零三端双向可控硅开关 |
| 电流 - 栅极触发电流 (Igt)（最大）： | 10mA |
| 电流 - 保持 (Ih)： | 500µA |
| 电流 - DC 正向(If)： | 60mA |
| 安装类型： | 通孔 |
| 封装/外壳： | 6-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 6-DIP |
| 包装： | 管件 |
Electrical Characteristics (T A = 25°C Unless otherwise speci?ed)
Individual Component Characteristics
Symbol
Parameters
Test Conditions
Device
Min.
Typ.*
Max.
Units
EMITTER
V F
I R
Input Forward Voltage
Reverse Leakage Current
I F = 30mA
V R = 6V
All
All
1.3
0.005
1.5
100
V
μA
DETECTOR
I DRM1
Peak Blocking Current,
Either Direction
V DRM = 600V, I F = 0 (2)
MOC316XM
MOC306XM
10
10
100
500
nA
dv/dt
Critical Rate of Rise of
Off-State Voltage
I F = 0 (Figure 9) (3)
MOC306XM
MOC316XM
600
1000
1500
V/μs
Transfer Characteristics
Symbol
I FT
DC Characteristics
LED Trigger Current
(rated I FT )
Test Conditions
Main Terminal
Voltage = 3V (3)
Device
MOC3061M
MOC3062M/
Min.
Typ.*
Max. Units
15
mA
10
MOC3162M
MOC3063M/
MOC3163M
5
V TM
I H
Peak On-State Voltage,
Either Direction
Holding Current,
Either Direction
I TM = 100 mA peak,
I F = rated I FT
All
All
1.8
500
3
V
μA
Zero Crossing Characteristics
Symbol
Characteristics
Test Conditions
Device
Min.
Typ.* Max. Units
V INH
I DRM2
Inhibit Voltage (MT1-MT2
voltage above which device
will not trigger)
Leakage in Inhibited State
I F = Rated I FT
I F = Rated I FT ,
V DRM = 600V,
off state
MOC3061M/2M/3M
MOC3162M/3M
Al
12
12
20
15
2
V
m A
Isolation Characteristics
Symbol
V ISO
Characteristics
Isolation Voltage
Test Conditions
f = 60 Hz, t = 1 sec
Device
All
Min.
7500
Typ.*
Max.
Units
V
*Typical values at T A = 25°C
Notes:
2. Test voltage must be applied within dv/dt rating.
3. All devices are guaranteed to trigger at an I F value less than or equal to max I FT . Therefore, recommended operating
I F lies between max I FT (15mA for MOC3061M, 10mA for MOC3062M & MOC3162M, 5mA for MOC3063M &
MOC3163M) and absolute max I F (60mA).
4. This is static dv/dt. See Figure 9 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
?2005 Fairchild Semiconductor Corporation
MOC306XM, MOC316XM Rev. 1.0. 4
3
www.fairchildsemi.com
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