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参数资料
| 型号： | MOC3081VM |
| 厂商： | Fairchild Optoelectronics Group |
| 文件页数： | 3/11页 |
| 文件大小： | 0K |
| 描述： | OPTOCOUPLER TRIAC ZC VDE 6-DIP |
| 标准包装： | 1,000 |
| 电压 - 隔离： | 7500Vpk |
| 通道数： | 1 |
| 电压 - 断路： | 800V |
| 输出类型： | 交流过零三端双向可控硅开关 |
| 电流 - 栅极触发电流 (Igt)（最大）： | 15mA |
| 电流 - 保持 (Ih)： | 500µA |
| 电流 - DC 正向(If)： | 60mA |
| 安装类型： | 通孔 |
| 封装/外壳： | 6-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 6-DIP |
| 包装： | 管件 |
Electrical Characteristics (T A = 25°C Unless otherwise speci?ed)
Individual Component Characteristics
Symbol
Parameters
Test Conditions
Min.
Typ.*
Max.
Units
EMITTER
V F
I R
Input Forward Voltage
Reverse Leakage Current
I F = 30mA
V R = 6V
1.3
0.005
1.5
100
V
μA
DETECTOR
I DRM1
Peak Blocking Current,
V DRM = 800V, I F = 0 (2)
10
500
nA
Either Direction
dv/dt
Critical Rate of Rise of
I F = 0 (Figure 9) (4)
600
1500
V/μs
Off-State Voltage
Transfer Characteristics
Symbol
I FT
DC Characteristics
LED Trigger Current
Test Conditions
Main Terminal
Voltage = 3V (3)
Device
MOC3081M
MOC3082M
Min.
Typ.*
Max. Units
15
mA
10
MOC3083M
5
V TM
Peak On-State Voltage,
I TM = 100mA peak,
All
1.8
3
V
Either Direction
I F = rated I FT
I H
Holding Current, Either
All
500
μA
Direction
Zero Crossing Characteristics
Symbol
V INH
Characteristics
Inhibit Voltage (MT1–MT2 voltage
Test Conditions
I F = Rated I FT
Min.
Typ.*
12
Max.
20
Units
V
above which device will not trigger)
I DRM2
Leakage in Inhibited State
I F = Rated I FT , V DRM = 800V,
2
m A
off state
Isolation Characteristics
Symbol
V ISO
Characteristics
Isolation Voltage (5)
Input-Output
Test Conditions
f = 60Hz, t = 1 sec.
Min.
7500
Typ.*
Max.
Units
Vac(pk)
*Typical values at T A = 25°C
Notes:
2. Test voltage must be applied within dv/dt rating.
3. All devices are guaranteed to trigger at an I F value less than or equal to max I FT . Therefore, recommended
operating I F lies between max I FT (15mA for MOC3081M, 10mA for MOC3082M, 5mA for MOC3083M) and
absolute max I F (60mA).
4. This is static dv/dt. See Figure 9 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
5. Isolation surge voltage, V ISO , is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are
common, and Pins 4, 5 and 6 are common.
?2005 Fairchild Semiconductor Corporation
MOC3081M, MOC3082M, MOC3083M Rev. 1.0. 3
3
www.fairchildsemi.com
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