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参数资料
| 型号： | MOCD217MR2 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 光电耦合器 |
| 英文描述： | 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封装： | PLASTIC, SOIC-8 |
| 文件页数： | 4/10页 |
| 文件大小： | 255K |
| 代理商： | MOCD217MR2 |
2005 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MOCD217M Rev. 1.0.1
3
MOCD217M
—
Dual
Channel
Phototransistor
Small
Outline
Surface
Mount
Optocoupler
s
(Lo
w
Input
Current)
Electrical Characteristics (T
A = 25°C unless otherwise specied)
*Typical values at TA = 25°C
Notes:
1. Input-Output Isolation Voltage, VISO, is an internal device dielectric breakdown rating.
2. For this test, Pins 1, 2, 3 and 4 are common and Pins 5, 6, 7 and 8 are common.
3. VISO rating of 2500 VAC(rms) for t = 1 min. is equivalent to a rating of 3,000 VAC(rms) for t = 1 sec.
4. Current Transfer Ratio (CTR) = IC/IF x 100%.
Symbol
Parameter
Test Conditions
Min.
Typ.*
Max.
Unit
EMITTER
VF
Input Forward Voltage
IF = 10mA
1.05
1.3
V
IR
Reverse Leakage Current
VR = 6.0V
0.1
100
A
C
Capacitance
18
pF
DETECTOR
ICEO1
Collector-Emitter Dark Current
VCE = 10 V, TA = 25°C
1.0
50
nA
ICEO2
VCE = 10 V, TA = 100°C
1.0
A
BVCEO
Collector-Emitter Breakdown
Voltage
IC = 100A
30
90
V
BVECO
Emitter-Collector Breakdown
Voltage
IE = 100A
7.0
7.8
V
CCE
Collector-Emitter Capacitance
f = 1.0MHz, VCE = 0V
7.0
pF
COUPLED
CTR
Current Transfer Ratio(4)
IF = 10mA, VCE = 10V
100
130
%
VCE (sat) Collector-Emitter Saturation
Voltage
IC = 2.0mA, IF = 10mA
0.35
0.4
V
ton
Turn-On Time
IC = 2.0mA, VCC = 10V, RL = 100
(Fig. 6)
7.5
s
toff
Turn-Off Time
IC = 2.0mA, VCC = 10V, RL = 100
(Fig. 6)
5.7
s
tr
Rise Time
IC = 2.0mA, VCC = 10V, RL = 100
(Fig. 6)
3.2
s
tf
Fall Time
IC = 2.0mA, VCC = 10V, RL = 100
(Fig. 6)
4.7
s
VISO
Isolation Surge Voltage(1)(2)(3)
f = 60Hz, t = 1 min.
2500
Vac(rms)
RISO
Isolation Resistance(2)
VI-O = 500V
1011
CISO
Isolation Capacitance(2)
VI-O = 0V, f = 1MHz
0.2
pF
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