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参数资料
| 型号： | MOD1004 |
| 厂商： | SENSITRON SEMICONDUCTOR |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 40 A, 600 V, N-CHANNEL IGBT |
| 文件页数： | 1/3页 |
| 文件大小： | 77K |
| 代理商： | MOD1004 |
221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX (631) 242 9798
World Wide Web Site - http://www.sensitron.com E-mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 1125, REV. -
600 VOLT, 40 AMP IGBT H-BRIDGE
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
(Tj=250C UNLESS OTHERWISE SPECIFIED)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
IC = 250
mA, V
GE = 0V
BVCES
600
-
V
Continuous Collector Current
TC = 25
OC
TC = 90
OC
IC
-
40 (1)
40
A
Pulsed Collector Current, 1mS
ICM
-
130
A
Short Circuit time, VGE = 15V, VCE = 500V, Tj = 125
OC
di/dt < 300 A/
VHF ,
C< 300A
tsc
-
10
msec
Gate to Emitter Voltage
VGE
-
+/-20
V
Gate-Emitter Leakage Current, VGE = +/-20V
IGES
-
+/- 100
nA
Gate Threshold Voltage, IC=2mA
V GE(TH)
4.0
-
7.0
V
Zero Gate Voltage Collector Current
VCE = 600 V, VGE=0V Ti=25
oC
VCE = 480 V, VGE=0V Ti=125
oC
ICES
-
0.25
3.0
mA
Collector to Emitter Saturation Voltage,
TC = 25
OC
IC = 40A, VGE = 15V,
TC = 125
OC
VCE(SAT)
-
2.0
2.3
2.5
V
Input Capacitance
Output Capacitance
Reverse Transfer Cap.
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cies
Coes
Cres
-
2800
300
200
-
pF
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Turn off Energy Loss
(Tj = 125
OC, IC = 40A, VGE = 15V, inductive load, VCC =
300 V, RG = 22
W
td(on)
tr
td(off)
tf
Eoff
Eon
-
100
50
300
40
1.5
2.0
-
nsec
mJ
Maximum Thermal Resistance
R
JC
-
0.60
oC/W
MOD1004
12
7
8
9
10
11
1
6
5
4
3
2
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