参数资料
型号: MP4013
元件分类: 功率晶体管
英文描述: 2 A, 70 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
封装: LEAD FREE, 2-25A1A, SIP-10
文件页数: 1/5页
文件大小: 148K
代理商: MP4013
MP4013
2006-10-27
1
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type
(Four Darlington Power Transistors 4 in One)
MP4013
High Power Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching
Small package by full molding (SIP 10 pins)
High collector power dissipation (4-device operation)
: PT = 4 W (Ta = 25°C)
High collector current: IC (DC) = 2 A (max)
High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
Zener diode included between collector and base.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
80 ± 10
V
Collector-emitter voltage
VCEO
80 ± 10
V
Emitter-base voltage
VEBO
8
V
DC
IC
2
Collector current
Pulse
ICP
3
A
Continuous base current
IB
0.5
A
Collector power dissipation
(1-device operation)
PC
2.0
W
Collector power dissipation
(4-device operation)
PT
4.0
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Array Configuration
Industrial Applications
Unit: mm
JEDEC
JEITA
TOSHIBA
2-25A1A
Weight: 2.1 g (typ.)
3
2
1
R1 R2
5
4
7
9
10
R1 ≈ 5 k
R2 ≈ 300
6
8
相关PDF资料
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MP4013 2 A, 70 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
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