参数资料
型号: MP4013
元件分类: 功率晶体管
英文描述: 2 A, 70 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
封装: 2-25A1A, SIP-10
文件页数: 4/5页
文件大小: 153K
代理商: MP4013
MP4013
2004-07-01
4
Collector-emitter voltage VCE (V)
Safe Operating Area
C
ollect
or
c
urre
nt
I C
(
A
)
Ambient temperature Ta (°C)
PT – Ta
To
ta
lpo
wer
dis
si
pa
tion
P
T
(W
)
rth – tw
Pulse width tw (s)
T
ra
nsie
nt
t
he
rm
al
re
sistan
ce
r th
(
°C
/W
)
Total power dissipation PT (W)
Tj – PT
Juncti
on
t
e
mp
era
tu
re
in
cr
eas
e
T
j
(
°C
)
300
1
0.001
0.01
0.1
1
10
100
1000
3
10
30
100
-No heat sink/Attached on a circuit board-
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
Circuit board
Curves should be applied in thermal
limited area. (Single nonrepetitive pulse)
The figure shows thermal resistance per
device versus pulse width.
(4)
(3)
(2)
(1)
0
8
40
2
4
6
80
120
160
200
0
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
Attached on a circuit board
Circuit board
(4)
(3)
(2)
(1)
1
2
3
4
0
160
40
80
120
5
0
Attached on a circuit board
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
Circuit board
(1)
(2)
(3)
(4)
0.03
0.5
20
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
IC max (pulsed)*
10 ms*
1 ms*
0.05
0.1
0.3
0.5
1
3
5
10
1
3
5
10
30
50
100
100 s*
VCEO max
相关PDF资料
PDF描述
MP4101 4 A, 60 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
MP4104 4 A, 100 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
MP4208 5 A, 60 V, 0.5 ohm, 4 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
MP4209 3 A, 100 V, 0.45 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
MP4211 5 A, 60 V, 0.28 ohm, 4 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
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