参数资料
型号: MP4021
元件分类: 功率晶体管
英文描述: 2 A, 85 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
封装: LEAD FREE, 2-25A1A, SIP-10
文件页数: 1/5页
文件大小: 146K
代理商: MP4021
MP4021
2006-10-27
1
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type
(Four Darlington Power Transistors in One)
MP4021
High Power Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching
Small package by full molding (SIP 10 pins)
High collector power dissipation (4-device operation)
: PT = 4 W (Ta = 25°C)
High collector current: IC (DC) = 2 A (max)
High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
Zener diode included between collector and base.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
85
V
Collector-emitter voltage
VCEO
100 ± 15
V
Emitter-base voltage
VEBO
8
V
DC
IC
2
Collector current
Pulse
ICP
3
A
Continuous base current
IB
0.5
A
Collector power dissipation
(1-device operation)
PC
2.0
W
Collector power dissipation
(4-device operation)
PT
4.0
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Array Configuration
Industrial Applications
Unit: mm
JEDEC
JEITA
TOSHIBA
2-25A1A
Weight: 2.1 g (typ.)
2
1
R1 R2
9
10
R1 ≈ 5 k, R2 ≈ 300
8
3
5
4
7
6
相关PDF资料
PDF描述
MP4024 3 A, 85 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
MP4024 3 A, 85 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
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