参数资料
型号: MP4208
元件分类: JFETs
英文描述: 5 A, 60 V, 0.5 ohm, 4 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
封装: 2-25A1D, SIP-10
文件页数: 2/6页
文件大小: 188K
代理商: MP4208
MP4208
2004-07-01
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance from channel to
ambient
(4-device operation, Ta = 25°C)
ΣRth (ch-a)
31.3
°C/W
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
TL
260
°C
This transistor is an electrostatic-sensitive device. Please handle withccaution.
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
―
±10
A
Drain cut-off current
IDSS
VDS = 60 V, VGS = 0 V
―
100
A
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
―
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
―
2.0
V
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
1
3
―
S
RDS (ON)
ID = 2.5 A, VGS = 4 V
―
0.3
0.5
Drain-source ON resistance
RDS (ON)
ID = 2.5 A, VGS = 10 V
―
0.2
0.3
Input capacitance
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
―
630
―
pF
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0 V, f = 1 MHz
―
95
―
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
―
290
―
pF
Rise time
tr
―
25
―
Turn-on time
ton
―
45
―
Fall time
tf
―
55
―
Switching time
Turn-off time
toff
VIN: tr, tf < 5 ns, duty ≤ 1%, tw = 10 s
―
200
―
ns
Total gate charge
(gate-source plus gate-drain)
Qg
―
22
―
nC
Gate-source charge
Qgs
―
16
―
nC
Gate-drain (“miller”) charge
Qgd
ID = 5 A, VGS = 10 V, VDD ≈ 48 V
―
6
―
nC
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
IDR
―
5
A
Peak drain reverse current
IDRP
―
10
A
Diode forward voltage
VDSF
IDR = 5 A, VGS = 0 V
―
1.0
2.0
V
Reverse recovery time
trr
―
80
―
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V
dIDR/dt = 50 A/s
―
0.1
―
C
10 V
0 V
VGS
R
L=
1
2
VDD ≈ 30 V
ID = 2.5 A
VOUT
50
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