参数资料
型号: MP4210
元件分类: JFETs
英文描述: 5 A, 60 V, 0.32 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, 2-25A1C, 10
文件页数: 5/7页
文件大小: 226K
代理商: MP4210
MP4210
2006-10-27
5
Drain-source voltage VDS (V)
Capacitance – VDS
C
apaci
tanc
e
C
(p
F)
Case temperature Tc (°C)
Vth – Tc
Gate
th
res
hol
dvol
ta
ge
V
th
(
V
)
Case temperature Tc (°C)
RDS (ON) – Tc
Drain
-s
o
urc
eO
N
res
istanc
e
R
DS
(O
N
)
(
)
Drain-source voltage VDS (V)
IDR – VDS
Drain
re
ve
rs
ec
ur
re
nt
I DR
(
A
)
Gate
-so
ur
ce
vo
ltage
V
GS
(
V
)
Total gate charge Qg (nC)
Dynamic Input/Output Characteristics
Dr
ai
n-
so
ur
ce
vo
ltag
e
V
DS
(V
)
0
80
VGS = 4 V
Common source
2.5, 1.3
2.5
1.3
ID = 4 A
VGS = 10 V
40
0
40
80
120
160
0.3
0.1
0.2
0.4
4
0
80
Common source
VDS = 10 V
ID = 1 mA
40
0
40
80
120
160
0.5
1.0
1.5
2.0
2.5
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
10
0.1
30
50
100
300
500
1000
3000
0.3 0.5
1
10
30 50
100
3
5
Ciss
Coss
Crss
Common source
Tc = 25°C
ID = 5 A
0
5
10
15
20
40
60
80
VDD = 48 V
12
VDD = 48 V
VDS
VGS
0
4
8
12
16
24
12
Common source
Tc = 25°C
0.1
0
0.4
0.8
1.6
2.0
2.4
1.2
0.3
0.5
1
3
5
10
20
VGS = 0, 1 V
10
3
1
Drain-source voltage VDS (V)
Safe Operating Area
D
rain
cu
rre
nt
I D
(A)
0.1
1
IDP max
100 s*
ID max
100 ms*
3
10
30
100
300
0.3
1
3
10
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
30
1 ms*
10 ms*
相关PDF资料
PDF描述
MP4211 5 A, 60 V, 0.28 ohm, 4 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
MP4301 3 A, 100 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
MP4301 3 A, 100 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
MP4304 3 A, 80 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
MP4305 5 A, 100 V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
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MP4211 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:POWER MOSFET MODULE SILICON P CHANNEL MOS TYPE
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MP4211_07 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver