参数资料
型号: MP4210
元件分类: JFETs
英文描述: 5 A, 60 V, 0.32 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, FULLMOLD, 2-25A1C, SIP-10
文件页数: 1/7页
文件大小: 193K
代理商: MP4210
MP4210
2004-07-01
1
TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-π-MOSV inOne)
MP4210
High Power, High Speed Switching Applications
For Printer Head Pin Driver and Pulse Motor Driver
For Solenoid Driver
4-V gate drivability
Small package by full molding (SIP 10 pins)
High drain power dissipation (4-device operation)
: PT = 4 W (Ta = 25°C)
Low drain-source ON resistance: RDS (ON) = 0.12 (typ.)
High forward transfer admittance: |Yfs| = 5.0 S (typ.)
Low leakage current: IGSS = ±10 A (max) (VGS = ±16 V)
IDSS = 100 A (max) (VDS = 60 V)
Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
60
V
Drain-gate voltage (RGS = 20 k)
VDGR
60
V
Gate-source voltage
VGSS
±20
V
DC
ID
5
Pulse
IDP
20
Drain power dissipation
(1-device operation, Ta = 25°C)
PD
2.0
W
Drain power dissipation
(4-device operation, Ta = 25°C)
PDT
4.0
W
Single pulse avalanche energy
(Note 1)
EAS
129
mJ
Avalanche current
IAR
5
A
1-device
operation
EAR
0.2
4-device
operation
EART
0.4
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Condition for avalanche energy (single pulse) measurement
VDD = 25 V, starting Tch = 25°C, L = 7 mH, RG = 25 , IAR = 5 A
Note 2: Repetitive rating; pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Industrial Applications
Unit: mm
JEDEC
JEITA
TOSHIBA
2-25A1C
Weight: 2.1 g (typ.)
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参数描述
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