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参数资料
| 型号： | MP4410 |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 60 V, 0.31 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | 2-32C1D, SIP-12 |
| 文件页数： | 2/4页 |
| 文件大小： | 119K |
| 代理商： | MP4410 |
MP4410
2004-07-01
2
Marking
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance of channel to
ambient
(4-device operation, Ta = 25°C)
ΣRth (ch-a)
28.4
°C/W
Thermal resistance of channel to case
(4-device operation, Tc = 25°C)
ΣRth (ch-c)
4.46
°C/W
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
TL
260
°C
This transistor is an electrostatic-sensitive device. Please handle with caution.
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
―
±10
A
Drain cut-off current
IDSS
VDS = 60 V, VGS = 0 V
―
100
A
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
―
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
―
2.0
V
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
3.0
5.0
―
S
ID = 2.5 A, VGS = 4 V
―
0.21
0.31
Drain-source ON resistance
RDS (ON)
ID = 2.5 A, VGS = 10 V
―
0.12
0.16
Input capacitance
Ciss
―
370
―
pF
Reverse transfer capacitance
Crss
―
60
―
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
―
180
―
pF
Rise time
tr
―
18
―
Turn-on time
ton
―
25
―
Fall time
tf
―
15
―
Switching time
Turn-off time
toff
VIN: tr, tf < 5 ns, dutys cycle ≤ 1%
―
170
―
ns
Total gate charge
(gate-source plus gate-drain)
Qg
―
12
―
nC
Gate-source charge
Qgs
―
8
―
nC
Gate-drain (“miller”) charge
Qgd
ID = 5 A, VGS = 10 V, VDD = 48 V
―
4
―
nC
10 V
VIN
12
VDD ≈ 30 V
ID = 2.5 A
VOUT
10 s
0 V
MP4410
JAPAN
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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相关代理商/技术参数 |
参数描述 |
|---|---|
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