参数资料
型号: MP4411
元件分类: JFETs
英文描述: 3 A, 100 V, 0.45 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, PLASTIC, 2-32C1D, SIP-12
文件页数: 2/7页
文件大小: 175K
代理商: MP4411
MP4411
2006-10-27
2
Array Configuration
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance from channel to
ambient
(4-device operation, Ta = 25°C)
ΣRth (ch-a)
28.4
°C/W
Thermal resistance from channel to
case
(4-device operation, Tc = 25°C)
ΣRth (ch-c)
4.46
°C/W
Maximum lead temperature for
soldering purposes
(3.2 mm from case for t = 10 s)
TL
260
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cut-off current
IDSS
VDS = 100 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
100
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
2.0
V
VGS = 4 V, ID = 2 A
0.36
0.45
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 2 A
0.28
0.35
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2 A
1.5
3.5
S
Input capacitance
Ciss
280
pF
Reverse transfer capacitance
Crss
50
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
105
pF
Rise time
tr
20
Turn-on time
ton
50
Fall time
tf
40
Switching time
Turn-off time
toff
VIN: tr, tf < 5 ns, duty ≤ 1%, tw = 10 μs
170
ns
Total gate charge
(gate-source plus gate-drain)
Qg
13.5
nC
Gate-source charge
Qgs
8.5
nC
Gate-drain (“miller”) charge
Qgd
VDD ≈ 80 V, VGS = 10 V, ID = 3 A
5
nC
10 V
VGS
R
L=
25
VDD ≈ 50 V
ID = 2 A
VOUT
50
0 V
5
4
2
3
1
6
12
11
9
10
8
7
相关PDF资料
PDF描述
MP4501 3 A, 100 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
MP4507 5 A, 100 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
MP4512 4 A, 80 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
MP4708 10 A, 60 V, 0.08 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
MP6902 4 A, 80 V, 6 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
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