参数资料
型号: MP4504
元件分类: 功率晶体管
英文描述: 5 A, 100 V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR
封装: 2-32B1B, SIP-12
文件页数: 2/5页
文件大小: 236K
代理商: MP4504
MP4504
2002-11-20
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance of junction to
ambient
(4 devices operation, Ta = 25°C)
ΣRth (j-a)
25
°C/W
Thermal resistance of junction to case
(4 devices operation, Tc = 25°C)
ΣRth (j-c)
5.0
°C/W
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
TL
260
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 100 V, IE = 0 A
10
A
Collector cut-off current
ICEO
VCE = 100 V, IB = 0 A
10
A
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0 A
0.6
2.0
mA
Collector-base breakdown voltage
V (BR) CBO
IC = 1 mA, IE = 0 A
100
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0 A
100
V
hFE (1)
VCE = 5 V, IC = 3 A
2000
15000
DC current gain
hFE (2)
VCE = 5 V, IC = 5 A
1000
Collector-emitter
VCE (sat)
IC = 3 A, IB = 6 mA
1.5
Saturation voltage
Base-emitter
VBE (sat)
IC = 3 A, IB = 6 mA
2.0
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
40
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0 A, f = 1 MHz
55
pF
Turn-on time
ton
0.3
Storage time
tstg
2.0
Switching time
Fall time
tf
IB1 = IB2 = 6 mA, duty cycle ≤ 1%
0.4
s
Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward current
IFM
3
A
Surge current
IFSM
t = 1 s, 1 shot
6
A
Forward voltage
VF
IF = 1 A, IB = 0 A
2.0
V
Reverse recovery time
trr
1.0
s
Reverse recovery charge
Qrr
IF = 3 A, VBE = 3 V, dIF/dt = 50 A/s
8
C
I B1
VCC = 30 V
Output
10
IB1
IB2
Input
20 s
I B2
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