参数资料
型号: MP4506
元件分类: 功率晶体管
英文描述: 5 A, 100 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
封装: 2-32B1B, SIP-12
文件页数: 1/5页
文件大小: 132K
代理商: MP4506
MP4506
2002-11-20
1
TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1)
MP4506
High Power Switching Applications.
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching.
Package with heat sink isolated to lead (SIP 12 pin)
High collector power dissipation (4 devices operation)
: PT = 5 W (Ta = 25°C)
High collector current: IC (DC) = 5 A (max)
High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 3 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO
5
V
DC
IC
5
Collector current
Pulse
ICP
8
A
Continuous base current
IB
0.1
A
Collector power dissipation
(1 device operation)
PC
3.0
W
Ta = 25°C
5.0
Collector power
dissipation
(4 devices operation)
Tc = 25°C
PT
25
W
Isolation voltage
VIsol
1000
V
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Array Configuration
Industrial Applications
Unit: mm
JEDEC
JEITA
TOSHIBA
2-32B1B
Weight: 6.0 g (typ.)
2
1
3
R1 R2
4
5
9
11
10
R1 ≈ 5 k
R2 ≈ 200
8
12
67
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