- 您现在的位置：买卖IC网 > PDF目录98026 > MP6404 5 A, 60 V, 0.32 ohm, 6 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | MP6404 |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 60 V, 0.32 ohm, 6 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-32C1K, FULL PACK, SIP-12 |
| 文件页数： | 6/11页 |
| 文件大小： | 276K |
| 代理商： | MP6404 |
MP6404
2004-07-01
4
Electrical Characteristics (Ta = 25°C) (Pch MOS FET)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
―
±10
A
Drain cut-off current
IDSS
VDS = 60 V, VGS = 0 V
―
100
A
Drain source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
―
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
―
2.0
V
VGS = 4 V, ID = 2.5 A
―
0.24
0.28
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
―
0.16
0.19
Forward transfer admittance
|Yfs|
VDS = 10 V, ID =2.5 A
2.0
4.0
―
S
Input capacitance
Ciss
―
630
―
pF
Reverse transfer capacitance
Crss
―
95
―
pF
Output capacitance
Coss
VDB = 10 V, VGS = 0 V, f = 1 MHz
―
290
―
pF
Rise time
tr
―
25
―
Turn-on time
ton
―
45
―
Fall time
tf
―
55
―
Switching time
Turn-off time
toff
VIN: tr, tf < 5 ns, duty ≤ 1%, tw = 10 s
―
200
―
ns
Total gate charge
(gate-source plus gate-drain)
Qg
―
22
―
nC
Gate-source charge
Qgs
―
16
―
nC
Gate-drain (“miller”) charge
Qgd
VDD ≈ 48 V, VGS = 10 V, ID = 5 A
―
6
―
nC
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
IDR
―
5
A
Pulse drain reverse current
IDRP
―
20
A
Diode forward voltage
VDSF
IDR = 5 A, VGS = 0 V
―
1.7
V
Reverse recovery time
trr
―
80
―
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V
dIDR/dt = 50 A/s
―
0.1
―
C
Marking
10 V
0 V
VGS
R
L=
1
2
VDD ≈ 30 V
ID = 2.5 A
VOUT
4.
7
MP6404
JAPAN
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
相关PDF资料 |
PDF描述 |
|---|---|
| MP6404 | 5 A, 60 V, 0.32 ohm, 6 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| MP6M11 | 3.5 A, 30 V, 0.14 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| MPC5123YVY300B | RISC PROCESSOR, PBGA516 |
| MPC5123VY300BR | RISC PROCESSOR, PBGA516 |
| SPC5121YVY400BR | RISC PROCESSOR, PBGA516 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MP6404(Q) | 制造商:Toshiba 功能描述:Trans MOSFET N/P-CH 60V 5A 12-Pin SIP Cut Tape 制造商:Toshiba America Electronic Components 功能描述:MOSFET MOD N/P-CH 60V 5A 12-SIP |
| MP6404_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:High Power High Speed Switching Applications 3-Phase Motor Drive and Stepping Motor Drive Applications |
| MP640B | 功能描述:晶体 64MHz 18pF 30ppm -20/70 RoHS:否 制造商:AVX 频率:26 MHz 容差: 频率稳定性:50 PPM 负载电容:8 pF 端接类型:SMD/SMT 封装 / 箱体:1210 (3225 metric) 工作温度范围:- 40 C to + 150 C 尺寸:2.5 mm W x 3.2 mm L x 0.85 mm H 封装:Reel |
| MP640B-E | 功能描述:晶体 64MHz 18pF 30ppm -40/85 RoHS:否 制造商:AVX 频率:26 MHz 容差: 频率稳定性:50 PPM 负载电容:8 pF 端接类型:SMD/SMT 封装 / 箱体:1210 (3225 metric) 工作温度范围:- 40 C to + 150 C 尺寸:2.5 mm W x 3.2 mm L x 0.85 mm H 封装:Reel |
| MP640-M06-F16-M3.0 | 制造商:UNICORP 功能描述: |
发布紧急采购，3分钟左右您将得到回复。