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参数资料
| 型号： | MP6754 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 10 A, 600 V, N-CHANNEL IGBT |
| 封装： | 2-78A1A, 11 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 388K |
| 代理商： | MP6754 |
MP6754
2001-03-13 2/5
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-emitter voltage
VCES
600
V
Gate-emitter voltage
VGES
± 20
V
DC
IC
10
Collector current
1ms
ICP
20
A
DC
IF
10
Forward current
1ms
IFM
20
A
Collector power dissipation (Tc = 25°C)
PC
40
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
40 ~ 125
°C
Isolation voltage
VISOL
2500
(AC 1 minute)
V
Screw torque
―
1.5
Nm
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGES
VGE = ± 20V, VCE = 0
―
± 500
nA
Collector cut-off current
ICES
VCE = 600V, VGE = 0
―
1.0
mA
Gate-emitter cut-off voltage
VGE (off)
IC = 10mA, VCE = 5V
6.0
―
9.0
V
Collector-emitter saturation voltage
VCE (sat)
IC = 10A, VGE = 15V
―
3.0
4.0
V
Input capacitance
Cies
VCE = 10V, VGE = 0, f = 1MHz
―
620
―
pF
Rise time
tr
―
0.3
0.6
Turn-on time
ton
―
0.4
0.8
Fall time
tf
―
0.2
0.35
Switching time
Turn-off time
toff
―
0.4
0.8
s
Forward voltage
VF
IF = 10A, VGE = 0
―
1.7
2.5
V
Reverse recovery time
trr
IF = 10A, VGE = 10V
di / dt = 100A / s
―
0.08
0.15
s
Transistor
―
3.09
Thermal resistance
Rth (j-c)
Diode
―
3.09
°C / W
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
The information contained herein is subject to change without notice.
000707EAA2
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