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参数资料
| 型号： | MP6757 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 25 A, 600 V, N-CHANNEL IGBT |
| 封装： | 2-78A1A, 11 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 154K |
| 代理商： | MP6757 |
MP6757
2002-11-20
1
TOSHIBA GTR Module Silicon N Channel IGBT
MP6757
High Power Switching Applications
Motor Control Applications
The electrodes are isolated from case.
6 IGBTs are 6 free wheeling diodes are built into
1 package.
Enhancement-mode
High speed: tf = 0.35 s (max) (IC = 25 A)
: trr = 0.15 s (max) (IF = 25 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
600
V
Gate-emitter voltage
VGES
±20
V
DC
IC
25
Collector current
1 ms
ICP
50
A
DC
IF
25
Forward current
1 ms
IFM
50
A
Collector power dissipation
(Tc = 25°C)
PC
72
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
40 to 125
°C
Isolation voltage
VIsol
2500
(AC 1 minute)
V
Screw torque
―
1.5
Nm
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-78A1A
Weight: 44 g (typ.)
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