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参数资料
| 型号： | MP6K61TR |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 30 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MPT6, 6 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 124K |
| 代理商： | MP6K61TR |
MP6K61
Transistors
2/4
Electrical characteristics (Ta=25
°C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Symbol
IGSS
Yfs
Min.
Typ.
Max.
Unit
Conditions
Gate-source leakage
V(BR) DSS
Drain-source breakdown voltage
IDSS
Zero gate voltage drain current
VGS (th)
Gate threshold voltage
Static drain-source on-state
resistance
RDS (on)
Forward transfer admittance
Input capacitance
Output capacitance
Ciss
Reverse transfer capacitance
Coss
Turn-on delay time
Crss
Rise time
td (on)
Turn-off delay time
tr
Fall time
td (off)
Total gate charge
tf
Gate-source charge
Qg
Gate-drain charge
Qgs
Qgd
Pulsed
±10
μAVGS=±20V, VDS=0V
ID
=5.0A, VDD 15V
30
VID
=1mA, VGS=0V
1
μAVDS=30V, VGS=0V
1.0
2.5
V
VDS
=10V, ID=1mA
36
51
ID
=5.0A, VGS=10V
50
70
m
Ω ID=5.0A, VGS=4.5V
55
77
ID
=5.0A, VGS=4.0V
3.0
SID
=5.0A, VDS=10V
460
pF
VDS
=10V
80
60
pF
VGS
=0V
10
pF
f
=1MHz
VGS
=10V
RL
=6.0Ω
RL
=3.0Ω, RG =10Ω
RG
=10Ω
20
ns
25
ns
5
ns
4.0
ns
1.8
nC
1.5
nC
VGS
=5V
nC
ID
=2.5A, VDD 15V
Body diode characteristics (Source-Drain) (Ta=25
°C)
<It is the same characteristics for the Tr1 and Tr2.>
Forward voltage
VSD
1.2
V
IS
=5.0A, VGS=0V
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Pulsed
相关PDF资料 |
PDF描述 |
|---|---|
| MP6K62TR | 6 A, 30 V, 0.047 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
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