- 您现在的位置：买卖IC网 > PDF目录30828 > MP6KE9.1CAE3 (MICROSEMI CORP-IRELAND) 600 W, BIDIRECTIONAL, SILICON, TVS DIODE PDF资料下载
参数资料
| 型号： | MP6KE9.1CAE3 |
| 厂商： | MICROSEMI CORP-IRELAND |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC, T-18, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 320K |
| 代理商： | MP6KE9.1CAE3 |
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
RF01007 Rev A, June 2010
High Reliability Product Group
Page 1 of 4
DEVICES
MP6KE6.8A thru MP6KE200CA, e3
LEVELS
M, MA, MX, MXL
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes
specify various screening and conformance inspection options based on MIL-PRF-19500.
Refer to MicroNote 129 for more details on the screening options.
Surface mount equivalents available as MSMBJ5.0A to MSMBJ170CA
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS Compliant devices
available by adding “e3” suffix
3σ lot norm screening performed on Standby Current ID
APPLICATIONS / BENEFITS
Economical TVS series for thru-hole mounting
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T
2
L, etc.
Protection from switching transients & induced RF
Compliant to IEC 61000-4-2 and IEC 61000-4-4 for ESD and EFT protection respectively
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
o
Class 1: MP6KE6.8A to MP6KE130A or CA
o
Class 2: MP6KE6.8A to MP6KE68A or CA
o
Class 3: MP6KE6.8A to MP6KE36A or CA
o
Class 4: MP6KE6.8A to MP6KE18A or CA
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:
o
Class 1: MP6KE6.8A to MP6KE43A or CA
o
Class 2: MP6KE6.8A to MP6KE22A or CA
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25
°C: 600 watts at 10/1000 μs (also see Figures 1,2, and 3)
with impulse repetition rate (duty factor) of 0.01 % or less
tclamping (0 V to V(BR) min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional
Operating and Storage temperature: -65
°C to +150 °C
Thermal Resistance: 25
°C/W at 3/8 inch (10 mm) lead length from body, or 85
C/W junction
to ambient when mounted on FR4 PC board with 4 mm
2 copper pads (1 oz) and track width 1
mm, length 25 mm
Steady-State Power: 5 watts @ TL=25
°C 3/8 inch (10 mm) from body, or 1.47 W when
mounted on FR4 PC board described for thermal resistance
Forward Voltage at 25
°C: 3.5 Volts maximum @ 100 Amp peak impulse of 8.3 ms half-sine
wave (unidirectional only)
Solder temperatures: 260
°C for 10 s (maximum)
T-18
600W Transient Voltage Suppressor
- High Reliability controlled devices
- Economical series for thru hole mounting
- Unidirectional (A) and Bidirectional (CA) construction
- Selections for 5.8 to 171 V standoff voltages (VWM)
相关PDF资料 |
PDF描述 |
|---|---|
| MXLP6KE15AE3TR | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| MXLP6KE9.1CAE3TR | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| MXP6KE20CATRE3 | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| MXP6KE24CA | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| MXP6KE43CATRE3 | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MP6M11 | 制造商:ROHM 制造商全称:Rohm 功能描述:4V Drive Nch + Pch MOSFET |
| MP6M11TCR | 制造商:ROHM Semiconductor 功能描述:MOSFET N/P-CH 30V 3.5A MPT6 |
| MP6M12 | 制造商:ROHM 制造商全称:Rohm 功能描述:4V Drive Nch + Pch MOSFET |
| MP6M12TCR | 制造商:ROHM Semiconductor 功能描述:MOSFET N/P-CH 30V 5A MPT6 |
| MP6M14 | 制造商:ROHM 制造商全称:Rohm 功能描述:4V Drive Nch + Pch MOSFET |
发布紧急采购，3分钟左右您将得到回复。