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参数资料
| 型号： | MP6M11 |
| 元件分类： | JFETs |
| 英文描述： | 3.5 A, 30 V, 0.14 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | MPT6, 6 PIN |
| 文件页数： | 7/11页 |
| 文件大小： | 1284K |
| 代理商： | MP6M11 |
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Data Sheet
MP6M11
10
100
1000
0.1
1
10
V
GS= 4.0V
Pulsed
Ta= 125
°C
Ta= 75
°C
Ta= 25
°C
Ta=
- 25°C
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
DRAIN-CURRENT : I
D[A]
S
T
A
T
IC
DRA
IN
-S
OURC
E
ON
-S
T
A
T
E
RE
S
IS
T
A
NC
E
:
R
DS
(o
n
)[m
]
0.1
1
10
0.01
0.1
1
10
V
DS= 10V
Pulsed
Ta= 125
°C
Ta= 75
°C
Ta= 25
°C
Ta=
- 25°C
Fig.8 Forward Transfer Admittance
vs. Drain Current
F
ORW
A
RD
T
RA
NS
F
E
R
A
DM
IT
T
A
NC
E
:
|Y
fs|
[S
]
DRAIN-CURRENT : I
D[A]
0.01
0.1
1
10
0
0.5
1
1.5
V
GS=0V
Pulsed
Ta= 125
°C
Ta= 75
°C
Ta= 25
°C
Ta=
- 25°C
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
S
OURC
E
CU
RR
E
NT
:
I
s
[
A
]
SOURCE-DRAIN VOLTAGE : V
SD [V]
0
50
100
150
200
0
2
4
6
8
10
I
D= 3.5A
I
D= 1.75A
Ta=25
°C
Pulsed
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
S
T
A
T
IC
DRA
IN
-S
OURC
E
ON
-S
T
A
T
E
RE
S
IS
T
A
NC
E
:
R
DS
(ON)
[m
]
GATE-SOURCE VOLTAGE : V
GS[V]
1
10
100
1000
0.01
0.1
1
10
t
f
t
d(on)
t
d(off)
Ta=25
°C
V
DD= 15V
V
GS=10V
R
G=10Ω
Pulsed
t
r
Fig.11 Switching Characteristics
S
W
IT
CH
ING
T
IM
E
:
t
[
n
s]
DRAIN-CURRENT : I
D[A]
0
2
4
6
8
10
0
1
2
3
4
5
Ta=25
°C
V
DD= 15V
I
D= 3.5A
Pulsed
Fig.12 Dynamic Input Characteristics
GA
T
E
-S
OURC
E
V
OL
T
A
GE
:
V
GS
[V
]
TOTAL GATE CHARGE : Qg [nC]
5/10
2011.03 - Rev.A
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相关代理商/技术参数 |
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|---|---|
| MP6M11TCR | 制造商:ROHM Semiconductor 功能描述:MOSFET N/P-CH 30V 3.5A MPT6 |
| MP6M12 | 制造商:ROHM 制造商全称:Rohm 功能描述:4V Drive Nch + Pch MOSFET |
| MP6M12TCR | 制造商:ROHM Semiconductor 功能描述:MOSFET N/P-CH 30V 5A MPT6 |
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