参数资料
型号: MP6X1TR
元件分类: 小信号晶体管
英文描述: 1000 mA, 32 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: MPT6, 6 PIN
文件页数: 2/4页
文件大小: 101K
代理商: MP6X1TR
MP6X1
Transistors
Rev.A
2/3
Electrical characteristics (Ta=25
°C)
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Parameter
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
32
40
5
120
150
15
500
390
400
VIC=1mA
IC=50
A
IE=50
A
VCB=20V
VEB=4V
IC/IB=500mA/50mA
VCE=5V, IE=
50mA, f=100MHz
VCE=3V, IC=100mA
VCB=10V, IE=0A, f=1MHz
V
nA
mV
MHz
pF
Typ.
Max.
Unit
Conditions
<Tr1, Tr2>
Pulsed
Transition frequency
Electrical characteristics curves
Fig.1 Grounded emitter propagation
characteristics
COLLECTOR
CURRENT
:
I
C
(mA)
BASE TO EMITTER VOLTAGE : VBE
(V)
0
1
2
5
10
20
50
100
200
500
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VCE=
6V
Ta=100
°C
55°C
25
°C
Fig.2 Grounded emitter output
characteristics
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
0
100
200
300
400
500
0.4
0.8
1.2
1.6
2.0
0
Ta=25
°C
0.5mA
IB=0A
1.5mA
3.0mA
3.5mA
1.0mA
2.0mA
2.5mA
4.5mA
4.0mA
Fig.3 DC current gain vs. collector
current (
Ι )
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC
(mA)
2
1
5
10
20
50 100 200
500 1000
50
100
200
500
1000
2000
Ta=25
°C
VCE=3V
1V
Fig.4 DC current gain vs.
collector current (
ΙΙ)
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC
(mA)
5
10 20
50 100 200 500 1000
2
200
500
1000
2000
100
50
1
VCE=
3V
Ta=100
°C
25
°C
55°C
Fig.5 Collector-emitter saturation
voltage vs. collector current (
Ι )
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
COLLECTOR CURRENT : IC
(mA)
1
1000
0.5
0.01
0.2
0.1
0.02
0.05
2
5
10
20
50 100 200
500
Ta=2
5
°C
20
10
IC/IB=50
Fig.6 Collector-emitter saturation
voltage vs. collector current (
ΙΙ)
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
COLLECTOR CURRENT : IC
(mA)
2
1
5 10
20
50 100 200 5001000
0.02
0.01
0.05
0.1
0.2
0.5
lC/lB
=10
Ta=100
°C
25
°C
40°C
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