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参数资料
| 型号： | MP6Z12TR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | MPT6, 6 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 487K |
| 代理商： | MP6Z12TR |
Data Sheet
www.rohm.com
20
10 ROHM Co., Ltd. All rights reserved.
MP6Z12
Electrical characteristics (Ta=25°C)
<Tr.1>
Symbol
Min.
Typ.
Max.
Unit
Collector-emitter breakdown voltage
BVCEO
50
-
V
IC= 1mA
Collector-base breakdown voltage
BVCBO
50
-
V
IC= 100μA
Emitter-base breakdown voltage
BVEBO
6-
-
V
IE= 100μA
Collector cut-off current
ICBO
--
1
A VCB= 50V
Emitter cut-off current
IEBO
--
1
A VEB= 4V
Collector-emitter staturation voltage
VCE(sat)
-
130
350
mV IC= 500mA, IB= 25mA
DC current gain
hFE
180
-
450
-
VCE= 2V, IC= 50mA
Turn-on time
ton
-40
-
ns
Storage time
tstg
-
410
-
ns
Fall time
tf
-75
-
ns
*1 Pulsed
*2 See switching time test circuit
<Tr.2>
Symbol
Min.
Typ.
Max.
Unit
Collector-emitter breakdown voltage
BVCEO
-50
-
V
IC= -1mA
Collector-base breakdown voltage
BVCBO
-50
-
V
IC= -100μA
Emitter-base breakdown voltage
BVEBO
-6
-
V
IE= -100μA
Collector cut-off current
ICBO
--
-1
A VCB= -50V
Emitter cut-off current
IEBO
--
-1
A VEB= -4V
Collector-emitter staturation voltage
VCE(sat)
-
-200
-400
mV IC= -500mA, IB= -25mA
DC current gain
hFE
180
-
450
-
VCE= -2V, IC= -50mA
Turn-on time
ton
-40
-
ns
Storage time
tstg
-
250
-
ns
Fall time
tf
-35
-
ns
*1 Pulsed
*2 See switching time test circuit
pF
VCB= 10V, IE=0A
f=1MHz
-
IC= 0.5A, IB1= 50mA,
IB2=-50mA, VCC 10V
Conditions
Parameter
MHz
360
-
VCE= 10V
IE=-200mA, f=100MHz
Transition frequency
fT
-
-7
Collector output capacitance
Cob
Parameter
Conditions
Transition frequency
fT
-
400
-
MHz
VCE= -10V
IE=200mA, f=100MHz
Collector output capacitance
Cob
-12
-
pF
VCB= -10V, IE=0A
f=1MHz
IC= -0.5A, IB1= -50mA,
IB2=50mA, VCC -10V
*2
~_
*1
*2
~_
*1
2/7
2010.11 - Rev.A
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