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参数资料
| 型号： | MP6Z13TR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 50 V, 2 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR |
| 封装： | MPT6, 6 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 1176K |
| 代理商： | MP6Z13TR |
www.rohm.com
2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
MP6Z13
Electrical characteristics (Ta = 25
°C)
<Tr.1>
Symbol
Min.
Typ.
Max.
Unit
Collector-emitter breakdown voltage
BVCEO
50
-
V
IC= 1mA
Collector-base breakdown voltage
BVCBO
50
-
V
IC= 100μA
Emitter-base breakdown voltage
BVEBO
6-
-
V
IE= 100μA
Collector cut-off current
ICBO
--
1
A VCB= 50V
Emitter cut-off current
IEBO
--
1
A VEB= 4V
Collector-emitter staturation voltage
VCE(sat)
-
130
350
mV IC= 1A, IB= 50mA
DC current gain
hFE
180
-
450
-
VCE= 3V, IC= 50mA
Turn-on time
ton
-50
-
ns
Storage time
tstg
-
450
-
ns
Fall time
tf
-80
-
ns
*1 Pulsed
*2 See switching time test circuit
<Tr.2>
Symbol
Min.
Typ.
Max.
Unit
Collector-emitter breakdown voltage
BVCEO
-50
-
V
IC= -1mA
Collector-base breakdown voltage
BVCBO
-50
-
V
IC= -100μA
Emitter-base breakdown voltage
BVEBO
-6
-
V
IE= -100μA
Collector cut-off current
ICBO
--
-1
A VCB= -50V
Emitter cut-off current
IEBO
--
-1
A VEB= -4V
Collector-emitter staturation voltage
VCE(sat)
-
-200
-400
mV IC= -1A, IB= -50mA
DC current gain
hFE
180
-
450
-
VCE= -3V, IC= -50mA
Turn-on time
ton
-45
-
ns
Storage time
tstg
-
250
-
ns
Fall time
tf
-35
-
ns
*1 Pulsed
*2 See switching time test circuit
IC= -1.5A, IB1= -150mA,
IB2=150mA, VCC -10V
MHz
VCE= -10V
IE=500mA, f=100MHz
Collector output capacitance
Cob
-24
-
pF
VCB= -10V, IE=0A
f=1MHz
-
13
Collector output capacitance
Cob
Parameter
Transition frequency
fT
-
300
-
Conditions
pF
VCB= 10V, IE=0A
f=1MHz
-
IC= 1.5A, IB1= 150mA,
IB2=-150mA, VCC 10V
Conditions
Parameter
MHz
320
-
VCE= 10V
IE=-500mA, f=100MHz
Transition frequency
fT
-
*2
~
_
*1
*2
~_
*1
2/7
2011.02 - Rev.A
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