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参数资料
| 型号： | MP6Z2TR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 32 V, 2 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR |
| 封装： | MPT6, 6 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 114K |
| 代理商： | MP6Z2TR |
MP6Z2
Transistors
Rev.A
4/5
<Tr2>
Fig.1 Grounded Emitter Propagation
Characteristics
BASE TO EMITTER VOLTAGE : VBE
(V)
COLLECTOR
CURRENT
:
I
C
(mA)
0
0.2
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
0.4
1
2
5
10
20
50
100
200
500
1000
VCE
= 3V
Ta
=100°C
25
°C
40°C
Fig.2 Grounded Emitter Output
Characteristics
0.4
0
0.8
1.2
1.6
2
0
0.1
0.2
0.3
0.4
0.5
IB
=0A
250μA
500μA
750μA
1mA
1.25mA
1.5mA
1.75mA
2mA
2.25mA
2.5mA
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Ta
=25°C
Fig.3 DC Current Gain vs.
Collector Curren ( )
DC
CURRENT
GAIN
:
h
FE
5 10 20 50 100
500 1000 2000
200
50
20
100
200
500
Ta
=25°C
COLLECTOR CURRENT : IC
(mA)
VCE
= 6V
3V
1V
Fig.4 DC Current Gain vs.
Collector Current ( )
50
20
100
200
500
DC
CURRENT
GAIN
:
h
FE
VCE
= 3V
COLLECTOR CURRENT : IC
(mA)
5 10 20 50 100
500 1000 2000
200
Ta
=100°C
25
°C
25°C
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Vurrent ( )
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(mV)
COLLECTOR CURRENT : IC
(mA)
5 10 20 50 100
500 1000 2000
200
50
100
200
500 Ta=25°C
IC/IB
=50
20
10
Fig.6 Collector-Emitter Saturation
Voltage vs. Collector Current ( )
5 10 20
50 100
500 1000 2000
200
20
50
100
200
500 lC/lB=10
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(mV)
COLLECTOR CURRENT : IC
(mA)
Ta
=100°C
25
°C
40°C
Fig.10 Normalized Thermal Resistance
(Element)
Fig.11 Safe Operating Area
Pulse width : Pw(s)
N
o
rm
a
liz
e
d
Tr
a
n
s
ie
n
t
T
h
e
rm
a
lRe
si
st
a
n
ce
:
r
(t
)
Ta=25
0.01
0.1
1
10
0.1
1
10
100
COLLECTOR TO EMITTER VOLTAGE
: V
CE (V)
C
O
L
E
CT
O
R
CU
RRE
N
T
:I
C
(A
)
1ms
10ms
100m
DC
Ta=25
Single
Pulse
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