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参数资料
| 型号： | MP6Z3TR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 60 V, 2 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR |
| 封装： | MPT6, 6 PIN |
| 文件页数： | 5/7页 |
| 文件大小： | 158K |
| 代理商： | MP6Z3TR |
MP6Z3
Transistors
Rev.A
5/6
0
0.5
1
1.5
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded Emitter
Propagation Characteristics
0.01
0.1
1
COLLECTOR
CURRENT
:
I
C
(A)
10
VCE
= 2V
Ta
= 40°C
Ta
=25°C
Ta
=125°C
Electrical characteristics curves
<Tr2>
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.3 DC Current Gain vs. Collector Current (
Ι )
1
10
100
DC
CURRENT
GAIN
:
h
FE
1000
Ta
=25°C
VCE
= 5V
VCE
= 3V
VCE
= 2V
IC/IB
=10/1
Ta
=25°C
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current (
Ι )
0.01
0.1
1
COLLECTOR
SATURATION
VOLTAGE
:
V
CE
(sat)
(V)
10
IC/IB
=20/1
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-Emitter Saturation
Voltage vs. Collector Current (
ΙΙ )
0.01
0.1
1
COLLECTOR
SATURATION
VOLTAGE
:
V
CE
(sat)
(V)
10
Ta
=25°C
Ta
= 40°C
Ta
=125°C
IC/IB
=10/1
0.001
0.01
0.1
1
10
EMITTER CURRENT : IE (A)
Fig.8 Transition Frequency
TRANSITION
FREQUENCY
:
fT
(MHz)
1000
Ta
=25°C
VCE
= 10V
1
10
100
0.1
1
10
100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.9 Collector Output Capacitance
1
10
100
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(pF)
1000
Ta
=25°C
f
=1MHz
COLLECTOR CURRENT : IC (A)
Fig.7 Base-Emitter Saturation
Voltage vs. Collecter Current
0.01
0.1
1
BASE
EMITTER
SATURATION
VOLTAGE
:
V
BE
(sat)
(V)
10
IC/IB
=10/1
Ta
=125°C
Ta
=25°C
Ta
= 40°C
0.001
0.01
0.1
1
10
Fig.2 Grounded Emitter Output Characteristics
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.4 DC Current Gain vs. Collector Current (
ΙΙ )
1
10
100
DC
CURRENT
GAIN
:
h
FE
1000
VCE
= 2V
Ta
=25°C
Ta
= 40°C
Ta
=125°C
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
-2.0
-1.5
-1.0
-0.5
0.0
IB=10mA
IB=1mA
IB=2mA
IB=3mA
IB=4mA
IB=5mA
IB=6mA
IB=7mA
IB=8mA
IB=9mA
CO
L
E
C
T
O
R
CUR
RE
NT
：
Ic
(A
)
COLLECT OR T O EMIT T ER VOLT AGE ： VCE(V)
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