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参数资料
| 型号： | MPC50N06 |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | JFETs |
| 英文描述： | 50 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 94K |
| 代理商： | MPC50N06 |
MPC50N06
Electrical Characteristics Tc=25℃
℃
℃ unless otherwise notes
Off Characteristics
Symbol
Parameter
Test Condition
Min.
Typ. Max. Unit
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250A
60
V
IDSS
Zero Gate Voltage Drain Current
VDS = 60V, VGS = 0V
1
μA
IGSSF
Forward Gate Body
Leakage Current
VGS = 20V, VDS = 0V
100
nA
IGSSR
Reverse Gate Body
Leakage Current
VGS = -20V, VDS = 0V
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250A
2
2.6
4
V
RDS(on) Static Drain-Source On-Resistance
VGS = 10V, ID = 50A
17
22
m
gFS
Forward Transconductance
VDS = 10V, ID = 25A
30
S
Dynamic Characteristics
Ciss
Input Capacitance
1900
pF
Coss
Reverse Transfer Capacitance
570
pF
Crss
Output Capacitance
VDS = 25V,
VGS = 0V,
f = 1.0 MHz
80
pF
Switching Characteristics
b
td(on)
Turn-On Delay Time
15
30
ns
tr
Turn-On Rise Time
5
15
ns
td(off)
Turn-Off Delay Time
40
80
ns
tf
Turn-Off Fall Time
VDD = 38V,
ID = 50A,
VGS = 10V
12
30
ns
Qg
Total Gate Charge
38
50
nC
Qgs
Gate-Source Charge
10
nC
Qgd
Gate-Drain Charge
VDS = 48V,
ID = 50A,
VGS = 10V
11
nC
Drain-Source Diode Characteristics
IS
Drain-Source Diode Forward
Continuous Current
VGS = 0V
50
A
ISM
Drain-Source Diode Forward
Pulsed Current
VGS = 0V
150
A
VSD
Drain-Source Diode Forward Voltage
Pulse test, t ≤ 300 s, duty cycle d ≤ 1.5 %
VGS = 0V, IS = 50A
0.9
1.5
V
Notes :_
a. Repetitive Rating : Pulse width limited by maximum junction temperature.
b. Pulse Test : Pulse Width < 300s, Duty Cycle < 1.5%.
c. L=90uH, VDD = 24V, ID=50A , RG = 25, Starting TJ = 25C
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