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参数资料
| 型号： | MPC5553MVR132 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 17/68页 |
| 文件大小： | 0K |
| 描述： | MCU 1.5MB FLASH 132MHZ 416-PBGA |
| 标准包装： | 200 |
| 系列： | MPC55xx Qorivva |
| 核心处理器： | e200z6 |
| 芯体尺寸： | 32-位 |
| 速度： | 132MHz |
| 连通性： | CAN，EBI/EMI，以太网，SCI，SPI |
| 外围设备： | DMA，POR，PWM，WDT |
| 输入/输出数： | 220 |
| 程序存储器容量： | 1.5MB（1.5M x 8） |
| 程序存储器类型： | 闪存 |
| RAM 容量： | 64K x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 1.35 V ~ 1.65 V |
| 数据转换器： | A/D 40x12b |
| 振荡器型： | 外部 |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 416-BBGA |
| 包装： | 托盘 |
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MPC5553 Microcontroller Data Sheet, Rev. 4
Electrical Characteristics
Freescale Semiconductor
24
3.11
H7Fa Flash Memory Electrical Characteristics
Table 14. Flash Program and Erase Specifications (TA = TL to TH)
Spec
Flash Program Characteristic
Symbol
Min.
Typical 1
1 Typical program and erase times are calculated at 25 oC operating temperature using nominal supply values.
Initial
Max. 2
2 Initial factory condition:
100program/erase cycles, 25 oC, using a typical supply voltage measured at a minimum system
frequency of 80 MHz.
Max. 3
3 The maximum erase time occurs after the specified number of program/erase cycles. This maximum value is characterized
but not guaranteed.
Unit
3
Doubleword (64 bits) program time 4
4 Actual hardware programming times. This does not include software overhead.
Tdwprogram
—
10
—
500
s
4
Page program time 4
Tpprogram
—
22
44 5
5 Page size is 256 bits (8 words).
500
s
7
16 KB block pre-program and erase time
T16kpperase
—
265
400
5000
ms
9
48 KB block pre-program and erase time
T48kpperase
—
345
400
5000
ms
10
64 KB block pre-program and erase time
T64kpperase
—
415
500
5000
ms
8
128 KB block pre-program and erase time
T128kpperase
—
500
1250
7500
ms
11
Minimum operating frequency for program and erase
operations 6
6 The read frequency of the flash can range up to the maximum operating frequency. There is no minimum read frequency
condition.
—25
—
MHz
Table 15. Flash EEPROM Module Life (TA = TL to TH)
Spec
Characteristic
Symbol
Min.
Typical 1
1 Typical endurance is evaluated at 25o C. Product qualification is performed to the minimum specification. For additional
information on the Freescale definition of typical endurance, refer to engineering bulletin EB619 Typical Endurance for
Nonvolatile Memory.
Unit
1a
Number of program/erase cycles per block for 16 KB, 48 KB, and
64 KB blocks over the operating temperature range (TJ)
P/E
100,000
—
cycles
1b
Number of program/erase cycles per block for 128 KB blocks over the
operating temperature range (TJ)
P/E
1000
100,000
cycles
2
Data retention
Blocks with 0–1,000 P/E cycles
Blocks with 1,001–100,000 P/E cycles
Retention
20
5
—
years
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