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| 型号： | MPC5604CF1MLQ4 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | MICROCONTROLLER, PQFP144 |
| 封装： | 20 X 20 MM, 1.40 MM HEIGHT, 0.50 MM PITCH, LQFP-144 |
| 文件页数： | 57/104页 |
| 文件大小： | 953K |
| 代理商： | MPC5604CF1MLQ4 |
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MPC5604B/C Microcontroller Data Sheet, Rev. 9
Electrical characteristics
Freescale Semiconductor
56
ECC circuitry provides correction of single bit faults and is used to improve further automotive reliability results. Some units
will experience single bit corrections throughout the life of the product with no impact to product reliability.
Table 28. Program and erase specifications
Symbol
C
Parameter
Value
Unit
Min
Typ1
1 Typical program and erase times assume nominal supply values and operation at 25 °C.
Initial
max2
2 Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage.
Max3
3 The maximum program and erase times occur after the specified number of program/erase cycles. These maximum
values are characterized but not guaranteed.
Tdwprogram CC C Double word (64 bits) program time
4
4 Actual hardware programming times. This does not include software overhead.
—22
50
500
s
T16Kpperase
16 KB block preprogram and erase time
—
300
500
5000
ms
T32Kpperase
32 KB block preprogram and erase time
—
400
600
5000
ms
T128Kpperase
128 KB block preprogram and erase time
—
800
1300
7500
ms
Tesus
CC D Erase suspend latency
—
30
s
Table 29. Flash module life
Symbol
C
Parameter
Conditions
Value
Unit
Min
Typ
Max
P/E
CC C Number of program/erase cycles
per block over the operating
temperature range (TJ)
16 KB blocks
100,000
—
cycles
32 KB blocks
10,000 100,000
—
128 KB blocks
1,000
100,000
—
Retention CC C Minimum data retention at 85 °C
average ambient temperature1
1 Ambient temperature averaged over duration of application, not to exceed recommended product operating
temperature range.
Blocks with
0–1,000 P/E cycles
20
—
years
Blocks with
1,001–10,000 P/E cycles
10
—
Blocks with
10,001–100,000 P/E cycles
5—
—
Table 30. Flash read access timing
Symbol
C
Parameter
Conditions1
1 V
DD = 3.3 V ± 10% / 5.0 V ± 10%, TA = 40 to 125 °C, unless otherwise specified
Max
Unit
fREAD
CC
P Maximum frequency for Flash reading
2 wait states
64
MHz
C
1 wait state
40
C
0 wait states
20
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