参数资料
型号: MPC8313EVRAFFB
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 微控制器/微处理器
英文描述: 32-BIT, 333 MHz, MICROPROCESSOR, PBGA516
封装: 27 X 27 MM, 2.25 MM HEIGHT, 1 MM PITCH, LEAD FREE, TEPBGAII-516
文件页数: 11/100页
文件大小: 1247K
代理商: MPC8313EVRAFFB
MPC8313E PowerQUICC II Pro Processor Hardware Specifications, Rev. 3
18
Freescale Semiconductor
DDR and DDR2 SDRAM
MDQS epilogue end
tDDKHME
–0.6
0.6
ns
6
Notes:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. Output hold time can be read as DDR timing
(DD) from the rising or falling edge of the reference clock (KH or KL) until the output went invalid (AX or DX). For example,
tDDKHAS symbolizes DDR timing (DD) for the time tMCK memory clock reference (K) goes from the high (H) state until
outputs (A) are setup (S) or output valid time. Also, tDDKLDX symbolizes DDR timing (DD) for the time tMCK memory clock
reference (K) goes low (L) until data outputs (D) are invalid (X) or data output hold time.
2. All MCK/MCK referenced measurements are made from the crossing of the two signals ±0.1 V.
3. ADDR/CMD includes all DDR SDRAM output signals except MCK/MCK, MCS, and MDQ//MDM/MDQS.
4. Note that tDDKHMH follows the symbol conventions described in note 1. For example, tDDKHMH describes the DDR timing (DD)
from the rising edge of the MCK[n] clock (KH) until the MDQS signal is valid (MH). tDDKHMH can be modified through control
of the DQSS override bits in the TIMING_CFG_2 register. This is typically set to the same delay as the clock adjust in the
CLK_CNTL register. The timing parameters listed in the table assume that these 2 parameters have been set to the same
adjustment value. See the
MPC8313E PowerQUICC II Pro Integrated Processor Family Reference Manual, for a
description and understanding of the timing modifications enabled by use of these bits.
5. Determined by maximum possible skew between a data strobe (MDQS) and any corresponding bit of data (MDQ), ECC
(MECC), or data mask (MDM). The data strobe should be centered inside of the data eye at the pins of the microprocessor.
6. All outputs are referenced to the rising edge of MCK[n] at the pins of the microprocessor. Note that tDDKHMP follows the
symbol conventions described in note 1.
Table 21. DDR and DDR2 SDRAM Output AC Timing Specifications for Silicon Rev 2.x or Later
Parameter
Symbol1
Min
Max
Unit
Notes
MCK[
n] cycle time, MCK[n]/MCK[n] crossing
tMCK
610
ns
2
ADDR/CMD output setup with respect to MCK
tDDKHAS
ns
3
333 MHz
2.1
266 MHz
2.5
ADDR/CMD output hold with respect to MCK
tDDKHAX
ns
3
333 MHz
2.0
266 MHz
2.7
MCS[
n] output setup with respect to MCK
tDDKHCS
ns
3
333 MHz
2.1
266 MHz
3.15
MCS[
n] output hold with respect to MCK
tDDKHCX
ns
3
333 MHz
2.0
266 MHz
2.7
MCK to MDQS Skew
tDDKHMH
–0.6
0.6
ns
4
MDQ//MDM output setup with respect to
MDQS
tDDKHDS,
tDDKLDS
ps
5
333 MHz
800
266 MHz
900
MDQ//MDM output hold with respect to MDQS
tDDKHDX,
tDDKLDX
ps
5
333 MHz
750
266 MHz
1000
Table 20. DDR and DDR2 SDRAM Output AC Timing Specifications for Rev. 1.0 Silicon (continued)
Parameter
Symbol 1
Min
Max
Unit
Notes
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