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| 型号： | MPC8349ECZUAGDB |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 8/87页 |
| 文件大小： | 0K |
| 描述： | IC MPU PWRQUICC II 672-TBGA |
| 标准包装： | 24 |
| 系列： | MPC83xx |
| 处理器类型： | 32-位 MPC83xx PowerQUICC II Pro |
| 速度： | 400MHz |
| 电压： | 1.2V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 672-LBGA |
| 供应商设备封装： | 672-TBGA（35x35） |
| 包装： | 托盘 |
| 配用： | MPC8349E-MITX-GP-ND - KIT REFERENCE PLATFORM MPC8349E MPC8349E-MITXE-ND - BOARD REFERENCE FOR MPC8349 MPC8349EA-MDS-PB-ND - KIT MODULAR DEV SYSTEM MPC8349E |
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MPC8349EA PowerQUICC II Pro Integrated Host Processor Hardware Specifications, Rev. 13
16
Freescale Semiconductor
DDR and DDR2 SDRAM
Table 14 provides the recommended operating conditions for the DDR SDRAM component(s) when
GVDD(typ) = 2.5 V.
Output low current (VOUT = 0.280 V)
IOL
13.4
—
mA
—
Notes:
1. GVDD is expected to be within 50 mV of the DRAM GVDD at all times.
2. MVREF is expected to equal 0.5 × GVDD, and to track GVDD DC variations as measured at the receiver. Peak-to-peak noise
on MVREF cannot exceed ±2% of the DC value.
3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to equal
MVREF. This rail should track variations in the DC level of MVREF.
4. Output leakage is measured with all outputs disabled, 0 V
≤ V
OUT ≤ GVDD.
Table 13. DDR2 SDRAM Capacitance for GVDD(typ) = 1.8 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
Input/output capacitance: DQ, DQS, DQS
CIO
68
pF
1
Delta input/output capacitance: DQ, DQS, DQS
CDIO
—0.5
pF
1
Note:
1. This parameter is sampled. GVDD = 1.8 V ± 0.090 V, f = 1 MHz, TA = 25°C, VOUT = GVDD/2, VOUT (peak-to-peak) = 0.2 V.
Table 14. DDR SDRAM DC Electrical Characteristics for GVDD(typ) = 2.5 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
I/O supply voltage
GVDD
2.375
2.625
V
1
I/O reference voltage
MVREF
0.49
× GV
DD
0.51
× GV
DD
V2
I/O termination voltage
VTT
MVREF –0.04
MVREF +0.04
V
3
Input high voltage
VIH
MVREF +0.18
GVDD +0.3
V
—
Input low voltage
VIL
–0.3
MVREF –0.18
V
—
Output leakage current
IOZ
–9.9
μA4
Output high current (VOUT = 1.95 V)
IOH
–15.2
—
mA
—
Output low current (VOUT = 0.35 V)
IOL
15.2
—
mA
—
Notes:
1. GVDD is expected to be within 50 mV of the DRAM GVDD at all times.
2. MVREF is expected to be equal to 0.5 × GVDD, and to track GVDD DC variations as measured at the receiver. Peak-to-peak
noise on MVREF may not exceed ±2% of the DC value.
3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
equal to MVREF. This rail should track variations in the DC level of MVREF.
4. Output leakage is measured with all outputs disabled, 0 V
≤ V
OUT ≤ GVDD.
Table 12. DDR2 SDRAM DC Electrical Characteristics for GVDD(typ) = 1.8 V (continued)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MPC8349ECZUAGFB | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Integrated Host Processor Hardware Specifications |
| MPC8349ECZUAJDB | 功能描述:微处理器 - MPU 8349 TBGA W/ ENCRYP RoHS:否 制造商:Atmel 处理器系列:SAMA5D31 核心:ARM Cortex A5 数据总线宽度:32 bit 最大时钟频率:536 MHz 程序存储器大小:32 KB 数据 RAM 大小:128 KB 接口类型:CAN, Ethernet, LIN, SPI,TWI, UART, USB 工作电源电压:1.8 V to 3.3 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:FBGA-324 |
| MPC8349ECZUAJFB | 功能描述:微处理器 - MPU 8349 TBGA W/ ENCR RoHS:否 制造商:Atmel 处理器系列:SAMA5D31 核心:ARM Cortex A5 数据总线宽度:32 bit 最大时钟频率:536 MHz 程序存储器大小:32 KB 数据 RAM 大小:128 KB 接口类型:CAN, Ethernet, LIN, SPI,TWI, UART, USB 工作电源电压:1.8 V to 3.3 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:FBGA-324 |
| MPC8349ECZUALDB | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Integrated Host Processor Hardware Specifications |
| MPC8349ECZUALFB | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Integrated Host Processor Hardware Specifications |
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