参数资料
型号: MPC8555EPXAQDX
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 微控制器/微处理器
英文描述: 32-BIT, 1000 MHz, RISC PROCESSOR, PBGA783
封装: 29 X 29 MM, 3.75 MM HEIGHT, 1 MM PITCH, FLIP CHIP, PLASTIC, BGA-783
文件页数: 5/88页
文件大小: 1244K
代理商: MPC8555EPXAQDX
MPC8555E PowerQUICC III Integrated Communications Processor Hardware Specifications, Rev. 4
Freescale Semiconductor
13
Power Characteristics
2. Junction temperature is a function of die size, on-chip power dissipation, package thermal
resistance, mounting site (board) temperature, ambient temperature, air flow, power
dissipation of other components on the board, and board thermal resistance. Any customer
design must take these considerations into account to ensure the maximum 105 degrees
junction temperature is not exceeded on this device.
3. Typical power is based on a nominal voltage of VDD = 1.2V, a nominal process, a junction
temperature of Tj = 105° C, and a Dhrystone 2.1 benchmark application.
4. Thermal solutions will likely need to design to a value higher than Typical Power based on
the end application, TA target, and I/O power
5. Maximum power is based on a nominal voltage of VDD = 1.2V, worst case process, a junction
temperature of Tj = 105° C, and an artificial smoke test.
6. The nominal recommended VDD = 1.3V for this speed grade.
Table 5. Typical I/O Power Dissipation
Interface
Parameters
GVDD
(2.5V)
OVDD
(3.3V)
LVDD
(3.3V)
LVDD
(2.5V)
Unit
Comments
DDR I/O
CCB = 200 MHz
0.46
W
CCB = 266 Mhz
0.59
W
CCB = 300 Mhz
0.66
W
CCB = 333 Mhz
0.73
W
PCI I/O
64b, 66Mhz
0.14
W
64b, 33Mhz
0.08
W
32b, 66Mhz
0.07
W
Multiply by 2 if using two 32b ports
32b, 33Mhz
0.04
W
Local Bus I/O
32b, 167Mhz
0.30
W
32b, 133Mhz
0.24
W
32b, 83Mhz
0.16
W
32b, 66Mhz
0.13
W
32b, 33Mhz
0.07
W
TSEC I/O
MII
0.01
W
Multiply by number of interfaces
used.
GMII or TBI
0.07
W
RGMII or RTBI
0.04
W
CPM - FCC
MII
0.015
W
RMII
0.013
W
HDLC 16 Mbps
0.009
W
UTOPIA-8 SPHY
0.06
W
UTOPIA-8 MPHY
0.1
W
UTOPIA-16 SPHY
0.094
W
UTOPIA-16 MPHY
0.135
W
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