参数资料
型号: MPF102D75Z
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 小信号晶体管
英文描述: Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92
文件页数: 1/7页
文件大小: 288K
代理商: MPF102D75Z
1999 Fairchild Semiconductor Corporation
MPF102
TO-92
G
S D
N-Channel RF Amplifier
This device is designed for electronic switching
Applications such as low ON resistance analog switching.
Sourced from Process 50.
Absolute Maximum Ratings *
TA=25 degree C unless otherwise noted
Symbol
Parameter
Value
Units
VDG
Drain-Gate Voltage
25
V
VGS
Gate-Source Voltage
-25
V
IGF
Forward Gate Current
10
mA
TJ,Tstg
Operating and Storage Junction Temperature Range
-55 to + 155
degree C
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES :
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25 degrees C unless otherwise noted.
Symbol
Characteristic
Units
Max
PD
Total Device Dissipation
Derate above 25 degrees C
350
2.8
mW
mW/degrees C
RθJC
Thermal Resistance, Junction to Case
125
degrees C/W
RθJA
Thermal Resistance, Junction to Ambient
357
degrees C/W
* Device mounted on FR-4 PCB 1.5” X 1.6” X 0.06”
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