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参数资料
| 型号： | MPF4856ZL1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 封装： | CASE 29-11, TO-226AA, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 167K |
| 代理商： | MPF4856ZL1 |
JFET Switching
N–Channel – Depletion
MAXIMUM RATINGS
Rating
Symbol
MPF4856
Unit
Drain–Source Voltage
VDS
+40
Vdc
Drain–Gate Voltage
VDG
+40
Vdc
Reverse Gate–Source Voltage
VGSR
–40
Vdc
Forward Gate Current
IGF
50
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
360
2.4
mW
mW/
°C
Storage Temperature Range
Tstg
–65 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = 1.0 Adc, VDS = 0)
V(BR)GSS
–40
–
Vdc
Gate Reverse Current
(VGS = –20 Vdc, VDS = 0)
(VGS = –20 Vdc, VDS = 0, TA = 150°C)
IGSS
–
0.25
0.5
nAdc
Adc
Gate Source Cutoff Voltage
VGS(off)
–4.0
–10
Vdc
Drain–Cutoff Current (VDS = 15 Vdc, VGS = –10 Vdc)
(VDS = 15 Vdc, VGS = –10 Vdc, TA = 150°C)
ID(off)
–
0.25
0.5
nAdc
Adc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(1)
IDSS
50
–
mAdc
Drain–Source On–Voltage
(ID = 20 mAdc, VGS = 0)
VDS(on)
–
0.75
Vdc
SMALL–SIGNAL CHARACTERISTICS
Drain–Source “ON” Resistance
rds(on)
–
25
Input Capacitance
(VDS = 0, VGS = –10 Vdc, f = 1.0 MHz)
Ciss
–
18
pF
Reverse Transfer Capacitance
(VDS = 0, VGS = –10 Vdc, f = 1.0 MHz)
Crss
–
8.0
pF
1. Pulse Test: Pulse Width < 300
s, Duty Cycle v 2.0%.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
June, 2001 – Rev.0
781
Publication Order Number:
MPF4856/D
MPF4856
CASE 29–11, STYLE 5
TO–92 (TO–226AA)
1
2
3
1 DRAIN
2 SOURCE
3
GATE
相关PDF资料 |
PDF描述 |
|---|---|
| MPF4856RLRA | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| MPF4856RLRE | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| MPF4856RL | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| MPF4856RLRM | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| MPF4856RLRP | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
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